{"title":"InAlAs/InGaAs高电子迁移率晶体管的可靠性问题","authors":"M. Tutt, G. Ng, D. Pavlidis, J. Mansfield","doi":"10.1109/ICIPRM.1991.147388","DOIUrl":null,"url":null,"abstract":"The effects of thermally stressing submicron In/sub x/Ga/sub 1-x/As/InAlAs/InP (x>or=0.53) HEMTs for storage periods of up to 100 h at 200 degrees C are discussed. DC characteristics are found to degrade. I/sub DSS/ decreased from 299 mA/mm to 182 mA/mm. G/sub m/ decreased from 513 mS/mm to 209 mS/mm. Decreases in microwave performance were also measured. f/sub T/ and f/sub max/ decreased by more than 30% and 20%, respectively. Evidence indicates that changes in the channel/buffer interface and layers manifested by the presence of additional trapping are responsible for this. Measurements of ohmic contacts show an increase from 0.19 Omega -mm to 0.26 Omega -mm. Results of X-ray analysis and Hall characterization are presented.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"25 1","pages":"349-352"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"Reliability issues of InAlAs/InGaAs high-electron-mobility transistors\",\"authors\":\"M. Tutt, G. Ng, D. Pavlidis, J. Mansfield\",\"doi\":\"10.1109/ICIPRM.1991.147388\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effects of thermally stressing submicron In/sub x/Ga/sub 1-x/As/InAlAs/InP (x>or=0.53) HEMTs for storage periods of up to 100 h at 200 degrees C are discussed. DC characteristics are found to degrade. I/sub DSS/ decreased from 299 mA/mm to 182 mA/mm. G/sub m/ decreased from 513 mS/mm to 209 mS/mm. Decreases in microwave performance were also measured. f/sub T/ and f/sub max/ decreased by more than 30% and 20%, respectively. Evidence indicates that changes in the channel/buffer interface and layers manifested by the presence of additional trapping are responsible for this. Measurements of ohmic contacts show an increase from 0.19 Omega -mm to 0.26 Omega -mm. Results of X-ray analysis and Hall characterization are presented.<<ETX>>\",\"PeriodicalId\":6444,\"journal\":{\"name\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"volume\":\"25 1\",\"pages\":\"349-352\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1991.147388\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147388","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Reliability issues of InAlAs/InGaAs high-electron-mobility transistors
The effects of thermally stressing submicron In/sub x/Ga/sub 1-x/As/InAlAs/InP (x>or=0.53) HEMTs for storage periods of up to 100 h at 200 degrees C are discussed. DC characteristics are found to degrade. I/sub DSS/ decreased from 299 mA/mm to 182 mA/mm. G/sub m/ decreased from 513 mS/mm to 209 mS/mm. Decreases in microwave performance were also measured. f/sub T/ and f/sub max/ decreased by more than 30% and 20%, respectively. Evidence indicates that changes in the channel/buffer interface and layers manifested by the presence of additional trapping are responsible for this. Measurements of ohmic contacts show an increase from 0.19 Omega -mm to 0.26 Omega -mm. Results of X-ray analysis and Hall characterization are presented.<>
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