Y. Poplavko, V. Moskalyuk, A.I. Timofeyev, Y. Prokopenko
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Pyrotransistor-GaAs FET with a "pyroelectric wafer" gate
The multifunction properties of GaAs and other III-V semi-insulating crystals can be expanded by the artificial decreasing of their electric response symmetry that could be transformed from piezo- into a pyroelectric class. An artificial pyroelectricity of III-V type semiconductors can form a basis for one-crystal pyroelectric sensors. The voltage sensitivity of GaAs (111)-cut corresponds to one of PZT pyroelectric ceramics so the GaAs wafer could be used as a thermal-to-electric transducer in a new microelectronic device named "pyrotransistor" that is uncooled far infrared detector based on MESFET technology.
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