基于单库珀对隧穿的库仑阻断静电计

A.B. Zorin , Yu.A. Pashkin , V.A. Krupenin , H. Scherer
{"title":"基于单库珀对隧穿的库仑阻断静电计","authors":"A.B. Zorin ,&nbsp;Yu.A. Pashkin ,&nbsp;V.A. Krupenin ,&nbsp;H. Scherer","doi":"10.1016/S0964-1807(98)00116-1","DOIUrl":null,"url":null,"abstract":"<div><p><span>We have studied the electrometric characteristics of the Bloch transistor, i.e. the structure comprising a double small-capacitance superconductor junction (where both the Josephson and the charging energies, </span><em>E</em><sub>J1,2</sub>∽<em>E</em><sub>C1,2</sub>≫<em>k</em><sub>B</sub><em>T</em><span>) and an adjacent gate electrode<span> polarizing its island. The transistor bias is realized through small-sized high-ohmic resistors (≫</span></span><em>R</em><sub>Q</sub>=<em>h</em>/4<em>e</em><sup>2</sup>≈6.5 kΩ) to ensure a high electromagnetic impedance of the transistor environment. At low bias current, a coherent flow of single Cooper pairs occurs and the average voltage across the transistor shows a 2<em>e</em>-periodic dependence on the polarization charge <em>Q</em><sub>0</sub>. The sensitivity of such an electrometer has been evaluated and found to be comparable to that of the single-electron counterpart. The device has been fabricated with Al/AlO<sub><em>x</em></sub>/Al junctions and two miniature on-chip Cr resistors (each of 80 kΩ and 10<!--> <em>μ</em>m long) which were located very close to the junctions. We used this device to measure 1/<em>f</em> noise of the background charge and found it to be about 9×10<sup>−4</sup> <em>e</em>/Hz<sup>1/2</sup> at 10<!--> <!-->Hz.</p></div>","PeriodicalId":100110,"journal":{"name":"Applied Superconductivity","volume":"6 7","pages":"Pages 453-458"},"PeriodicalIF":0.0000,"publicationDate":"1998-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S0964-1807(98)00116-1","citationCount":"1","resultStr":"{\"title\":\"Coulomb blockade electrometer based on single Cooper pair tunneling\",\"authors\":\"A.B. Zorin ,&nbsp;Yu.A. Pashkin ,&nbsp;V.A. Krupenin ,&nbsp;H. Scherer\",\"doi\":\"10.1016/S0964-1807(98)00116-1\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p><span>We have studied the electrometric characteristics of the Bloch transistor, i.e. the structure comprising a double small-capacitance superconductor junction (where both the Josephson and the charging energies, </span><em>E</em><sub>J1,2</sub>∽<em>E</em><sub>C1,2</sub>≫<em>k</em><sub>B</sub><em>T</em><span>) and an adjacent gate electrode<span> polarizing its island. The transistor bias is realized through small-sized high-ohmic resistors (≫</span></span><em>R</em><sub>Q</sub>=<em>h</em>/4<em>e</em><sup>2</sup>≈6.5 kΩ) to ensure a high electromagnetic impedance of the transistor environment. At low bias current, a coherent flow of single Cooper pairs occurs and the average voltage across the transistor shows a 2<em>e</em>-periodic dependence on the polarization charge <em>Q</em><sub>0</sub>. The sensitivity of such an electrometer has been evaluated and found to be comparable to that of the single-electron counterpart. The device has been fabricated with Al/AlO<sub><em>x</em></sub>/Al junctions and two miniature on-chip Cr resistors (each of 80 kΩ and 10<!--> <em>μ</em>m long) which were located very close to the junctions. We used this device to measure 1/<em>f</em> noise of the background charge and found it to be about 9×10<sup>−4</sup> <em>e</em>/Hz<sup>1/2</sup> at 10<!--> <!-->Hz.</p></div>\",\"PeriodicalId\":100110,\"journal\":{\"name\":\"Applied Superconductivity\",\"volume\":\"6 7\",\"pages\":\"Pages 453-458\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/S0964-1807(98)00116-1\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Superconductivity\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0964180798001161\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Superconductivity","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0964180798001161","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

本文研究了Bloch晶体管的电测特性,即由双小电容超导体结(其中Josephson和充电能量都在ej1,2∽ec1,2 ~ kBT)和相邻的栅极极化其岛组成的结构。晶体管的偏置是通过小尺寸的高欧姆电阻(r2 =h/4e2≈6.5 kΩ)来实现的,保证了晶体管环境的高电磁阻抗。在低偏置电流下,单个库珀对的相干流动发生,晶体管上的平均电压与极化电荷Q0呈2e周期依赖关系。这种静电计的灵敏度已被评估,并发现可与单电子对应物相媲美。该器件由Al/AlOx/Al结和两个非常靠近结的微型片上Cr电阻(每个80 kΩ和10 μm长)制成。我们使用该装置测量了背景电荷的1/f噪声,发现它在10 Hz时约为9×10−4 e/Hz1/2。
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Coulomb blockade electrometer based on single Cooper pair tunneling

We have studied the electrometric characteristics of the Bloch transistor, i.e. the structure comprising a double small-capacitance superconductor junction (where both the Josephson and the charging energies, EJ1,2EC1,2kBT) and an adjacent gate electrode polarizing its island. The transistor bias is realized through small-sized high-ohmic resistors (≫RQ=h/4e2≈6.5 kΩ) to ensure a high electromagnetic impedance of the transistor environment. At low bias current, a coherent flow of single Cooper pairs occurs and the average voltage across the transistor shows a 2e-periodic dependence on the polarization charge Q0. The sensitivity of such an electrometer has been evaluated and found to be comparable to that of the single-electron counterpart. The device has been fabricated with Al/AlOx/Al junctions and two miniature on-chip Cr resistors (each of 80 kΩ and 10 μm long) which were located very close to the junctions. We used this device to measure 1/f noise of the background charge and found it to be about 9×10−4 e/Hz1/2 at 10 Hz.

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