包含空间电荷效应、工作函数变化和筛选的铯包覆钨发射极阵列的电子电流评估

IF 1.4 4区 工程技术 Journal of Vacuum Science & Technology B Pub Date : 2021-08-09 DOI:10.1116/6.0001185
D. Guo, S. Sami, L. Diaz, M. Sanati, R. Joshi
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引用次数: 3

摘要

对含Cs和CsI涂层的钨极发射极阵列的电子电流输出进行了评估。该方法基于材料物理的第一性原理计算,包括评估内部电位、电子波函数、隧道概率和功函数,以预测场发射电流。这与时间相关的动力学模拟相结合,用于评估发射极阵列电流,其中包括来自电子群的多体库仑贡献,基于线电荷模型的屏蔽几何场增强,以及来自电子群的动态筛选。我们对具有六边形晶格的阵列的数值评估表明,随着发射极间距的减少,场屏蔽的预期作用。对于发射器数量的缩放,结果表明最近邻距离大于发射器高度的2.5倍,与之前的报告保持一致。
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Evaluation of electron currents from cesium-coated tungsten emitter arrays with inclusion of space charge effects, workfunction changes, and screening
Evaluations of electron current output from tungsten emitter arrays with Cs and CsI coatings are carried out. The approach is based on first-principles calculations of the material physics including evaluation of the internal potentials, electronic wavefunctions, tunneling probabilities, and work function to predict field emission currents. This is coupled to time-dependent kinetic simulations for the assessment of emitter array currents with an inclusion of many-body Coulomb contributions from the electron swarm, geometric field enhancements with shielding based on a line charge model and dynamic screening from the swarm. Our numerical evaluations for arrays with a hexagonal lattice show the expected role of field screening with reductions in emitter separation. For scaling with emitter number, the results indicate nearest neighbor separations of more than 2.5 times the emitter height, in keeping with previous reports.
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来源期刊
Journal of Vacuum Science & Technology B
Journal of Vacuum Science & Technology B 工程技术-工程:电子与电气
自引率
14.30%
发文量
0
审稿时长
2.5 months
期刊介绍: Journal of Vacuum Science & Technology B emphasizes processing, measurement and phenomena associated with micrometer and nanometer structures and devices. Processing may include vacuum processing, plasma processing and microlithography among others, while measurement refers to a wide range of materials and device characterization methods for understanding the physics and chemistry of submicron and nanometer structures and devices.
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