使用无损伤中性束蚀刻栅极凹槽的低阈值电压迟滞的增强模式AlGaN/GaN miss - hemt

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI:10.1109/NANO.2016.7751501

Yen-Ku Lin, S. Noda, R. Lee, Chia-Ching Huang, Q. Luc, S. Samukawa, E. Chang

{"title":"使用无损伤中性束蚀刻栅极凹槽的低阈值电压迟滞的增强模式AlGaN/GaN miss - hemt","authors":"Yen-Ku Lin, S. Noda, R. Lee, Chia-Ching Huang, Q. Luc, S. Samukawa, E. Chang","doi":"10.1109/NANO.2016.7751501","DOIUrl":null,"url":null,"abstract":"An enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched (NBE) gate recess is reported. The NBE can eliminate the plasma-induced defects that generated by irradiating UV/VUV photons as encounted in the conventional inductively coupled plasma-reactive-ion etching (ICP-RIE). Combining the new gate recess process and PEALD-AlN interfacial passivation layer, the Al2O3/AlGaN/GaN enhancement-mode HEMT device shows a threshold voltage of 1.5 V and a current density of 449 mA/mm, and the three-terminal breakdown voltage was 432 V. The device also shows small hysteresis in threshold voltage at stable I-V curve.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"2 1","pages":"799-801"},"PeriodicalIF":0.0000,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess\",\"authors\":\"Yen-Ku Lin, S. Noda, R. Lee, Chia-Ching Huang, Q. Luc, S. Samukawa, E. Chang\",\"doi\":\"10.1109/NANO.2016.7751501\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched (NBE) gate recess is reported. The NBE can eliminate the plasma-induced defects that generated by irradiating UV/VUV photons as encounted in the conventional inductively coupled plasma-reactive-ion etching (ICP-RIE). Combining the new gate recess process and PEALD-AlN interfacial passivation layer, the Al2O3/AlGaN/GaN enhancement-mode HEMT device shows a threshold voltage of 1.5 V and a current density of 449 mA/mm, and the three-terminal breakdown voltage was 432 V. The device also shows small hysteresis in threshold voltage at stable I-V curve.\",\"PeriodicalId\":6646,\"journal\":{\"name\":\"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)\",\"volume\":\"2 1\",\"pages\":\"799-801\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NANO.2016.7751501\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO.2016.7751501","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

报道了一种使用无损伤中性束蚀刻(NBE)栅极凹槽的具有低阈值电压滞后的增强模式AlGaN/GaN miss - hemt。NBE可以消除传统电感耦合等离子体反应刻蚀(ICP-RIE)中由紫外/紫外光子照射产生的等离子体诱导缺陷。结合新的栅极凹槽工艺和peal - aln界面钝化层，Al2O3/AlGaN/GaN增强模式HEMT器件的阈值电压为1.5 V，电流密度为449 mA/mm，三端击穿电压为432 V。在稳定的I-V曲线下，器件对阈值电压的迟滞也很小。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess

An enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched (NBE) gate recess is reported. The NBE can eliminate the plasma-induced defects that generated by irradiating UV/VUV photons as encounted in the conventional inductively coupled plasma-reactive-ion etching (ICP-RIE). Combining the new gate recess process and PEALD-AlN interfacial passivation layer, the Al2O3/AlGaN/GaN enhancement-mode HEMT device shows a threshold voltage of 1.5 V and a current density of 449 mA/mm, and the three-terminal breakdown voltage was 432 V. The device also shows small hysteresis in threshold voltage at stable I-V curve.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)

自引率

0.00%

发文量