{"title":"基于RSSI集成电路的低频唤醒接收机CMOS低功耗限幅放大器设计","authors":"Pattrakorn Chokchalermwat, B. Supmonchai","doi":"10.1109/IEECON.2018.8712225","DOIUrl":null,"url":null,"abstract":"This paper presents the circuit level design of a CMOS low power limiting amplifier with received signal strength indicator (RSSI) for low frequency application. The design utilizes a five-stage cascade amplifier with PMOS double diode-connected load for the limiting amplifier and a successive detection log amp for the RSSI structure. DC feedback technique is employed to suppress the DC offset at the output. The proposed circuit is laid out in $\\pmb{0.13 \\ \\mu}\\mathbf{m}$ CMOS technology, then extracted and simulated. It occupies a minimal active area of 0.0084 mm2and is able to operate within a frequency range of 17 kHz to 166 kHz with an RSSI error less than 2dB, while consumes only $\\pmb{1.96\\mu}\\mathbf{A}$ current. It also achieves the −3dB input sensitivity of less than $\\pmb{12\\mu}\\mathbf{V}_{\\mathbf{rms}}$ for a typical dynamic range of 81.7 dB, and a maximum settling time of $\\pmb{236}\\ \\pmb{\\mu}\\mathbf{s}$. Compared with best performer circuits, our design has the lowest power consumption while other performance aspects are comparable or better.","PeriodicalId":6628,"journal":{"name":"2018 International Electrical Engineering Congress (iEECON)","volume":"144 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Design of a CMOS Low-Power Limiting Amplifier with RSSI Integrated Circuit for Low-Frequency Wake-Up Receivers\",\"authors\":\"Pattrakorn Chokchalermwat, B. Supmonchai\",\"doi\":\"10.1109/IEECON.2018.8712225\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the circuit level design of a CMOS low power limiting amplifier with received signal strength indicator (RSSI) for low frequency application. The design utilizes a five-stage cascade amplifier with PMOS double diode-connected load for the limiting amplifier and a successive detection log amp for the RSSI structure. DC feedback technique is employed to suppress the DC offset at the output. The proposed circuit is laid out in $\\\\pmb{0.13 \\\\ \\\\mu}\\\\mathbf{m}$ CMOS technology, then extracted and simulated. It occupies a minimal active area of 0.0084 mm2and is able to operate within a frequency range of 17 kHz to 166 kHz with an RSSI error less than 2dB, while consumes only $\\\\pmb{1.96\\\\mu}\\\\mathbf{A}$ current. It also achieves the −3dB input sensitivity of less than $\\\\pmb{12\\\\mu}\\\\mathbf{V}_{\\\\mathbf{rms}}$ for a typical dynamic range of 81.7 dB, and a maximum settling time of $\\\\pmb{236}\\\\ \\\\pmb{\\\\mu}\\\\mathbf{s}$. Compared with best performer circuits, our design has the lowest power consumption while other performance aspects are comparable or better.\",\"PeriodicalId\":6628,\"journal\":{\"name\":\"2018 International Electrical Engineering Congress (iEECON)\",\"volume\":\"144 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Electrical Engineering Congress (iEECON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEECON.2018.8712225\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Electrical Engineering Congress (iEECON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEECON.2018.8712225","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design of a CMOS Low-Power Limiting Amplifier with RSSI Integrated Circuit for Low-Frequency Wake-Up Receivers
This paper presents the circuit level design of a CMOS low power limiting amplifier with received signal strength indicator (RSSI) for low frequency application. The design utilizes a five-stage cascade amplifier with PMOS double diode-connected load for the limiting amplifier and a successive detection log amp for the RSSI structure. DC feedback technique is employed to suppress the DC offset at the output. The proposed circuit is laid out in $\pmb{0.13 \ \mu}\mathbf{m}$ CMOS technology, then extracted and simulated. It occupies a minimal active area of 0.0084 mm2and is able to operate within a frequency range of 17 kHz to 166 kHz with an RSSI error less than 2dB, while consumes only $\pmb{1.96\mu}\mathbf{A}$ current. It also achieves the −3dB input sensitivity of less than $\pmb{12\mu}\mathbf{V}_{\mathbf{rms}}$ for a typical dynamic range of 81.7 dB, and a maximum settling time of $\pmb{236}\ \pmb{\mu}\mathbf{s}$. Compared with best performer circuits, our design has the lowest power consumption while other performance aspects are comparable or better.