WO3/g-C3N4纳米复合材料的赝电容性能

Oluwafunmilola Ola, Yu Chen, Yanqiu Zhu, D. Grant
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引用次数: 0

摘要

六方氧化钨(WO3)具有稀土丰度高、成本低、多种氧化态、高密度(7 g cm-3)和电化学可逆性等优点,作为赝电容器电极材料具有广阔的应用前景。在这里,我们提出了由石墨氮化碳(g-C3N4)泡沫支撑的WO3纳米花组成的柔性电极的发展。采用简单的溶剂热法和炭化法制备了WO3/g-C3N4电极。所制备的WO3/g-C3N4电极在0.5 A g-1时的比电容为1130 F -1,在0.5 m H2SO4电解液中循环4000次后的循环稳定性为95%。
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Pseudocapacitive Performance of WO3/g-C3N4 Nanocomposites
Hexagonal tungsten oxide (WO3) holds great promise as an electrode material for pseudocapacitors due to its earth abundance, low cost, multiple oxidation states, high packing density (>7 g cm-3) and electrochemical reversibility. Here, we present the development of flexible electrodes consisting of WO3 nanoflowers supported on graphitic carbon nitride (g-C3N4) foams. The WO3/g-C3N4 electrodes were prepared via a facile solvothermal approach followed by carbonization. The resulting WO3/g-C3N4 electrodes have demonstrated excellent performance with specific capacitance of 1130 F g-1 at 0.5 A g-1 and good cyclic stability of 95% after 4,000 cycles in 0.5M H2SO4 electrolyte.
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