基于纳米畴工程的弛豫基无铅压电陶瓷的压电增强

I. Fujii, R. Mitsui, K. Nakashima, N. Kumada, S. Wada, H. Yabuta, M. Shimada, T. Watanabe, K. Miura
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引用次数: 0

摘要

batio3 -0.1 bi (Mg1/2Ti1/2)O3-0.6BiFeO3陶瓷分别掺杂钒或在相同成分的煅烧粉末中烧结。与没有煅烧粉末的未掺杂陶瓷相比,两种陶瓷的泄漏电流密度都降低(低于1 × 10-7 A/cm2),并且在频率和温度相关的介电测量中观察到没有介电弛豫行为。两种样品的居里温度均高于460℃。未掺V和掺V的烧结陶瓷的最大场致应变Smax/Emax分别从366 pm/V和799 pm/V增加到455 pm/V。这种增加与铋空位-氧空位缺陷偶极子的浓度降低有关。
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Piezoelectric enhancement of relaxor-based lead-free piezoelectric ceramics by nanodomain engineering
0.3BaTiO3-0.1Bi(Mg1/2Ti1/2)O3-0.6BiFeO3 ceramics were either doped with vanadium or sintered in calcined powder with the same composition. Compared to an undoped ceramic sintered without the calcined powder, both ceramics showed reduced leakage current densities (lower than 1 × 10-7 A/cm2) and absence of dielectric relaxation behaviors observed in frequency-and temperature-dependent dielectric measurements. The Curie temperatures of both samples were higher than 460 °C. The maximum field-induced strain over the applied field, Smax/Emax, of 366 pm/V of the undoped ceramic sintered without the calcined powder increased to 455 and 799 pm/V for the V-doped sample and the sample sintered with the calcined powder, respectively. The increase was related to a reduced concentration of bismuth vacancy - oxygen vacancy defect dipoles.
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