自由激子复合与深度缺陷对ZnO纳米结构由纳米棒向纳米管演化的峰值发射强度比的影响

W. Tsai, Shih-Shou Lo
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引用次数: 0

摘要

采用水热法制备氧化锌纳米棒。通过适量氯化钾(KCl)控制良好的化学水蚀刻工艺,将纳米棒的形貌转变为纳米管。SEM分析表明,在适当的KCl浓度和蚀刻时间下,采用化学蚀刻工艺可以使ZnO纳米棒转变为纳米管。将ZnO纳米棒浸泡在4M KCl水溶液中13 h,可以得到均匀的ZnO纳米管。利用温度依赖性光致发光光谱研究了纳米棒和纳米管的发光特性。在两种形态下均观察到两个峰(激子峰和深能级发射)。而ZnO纳米管的激子峰强度(EI)和缺陷相关发射峰强度(DI)比随着刻蚀时间的增加而增加。EI与DI强度比的变化可能是由于在蚀刻过程中ZnO的表面态增加,ZnO的氧缺陷减少。论证了ZnO纳米管的潜在应用前景。
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The influence on intensity ratio of peak emission between recombination of free-excitons and deep-defect for ZnO nanostructure evolution from nanorods to nanotubes
Zinc oxide (ZnO) nanorods are grown by a hydrothermal method. The morphology was changed from nanorod to nanotube via a well-controlled chemical aqueous etching process with appropriate amount potassium chloride (KCl). SEM analyses show that the ZnO nanorods can be changed to nanotubes when the chemical etching process was adopted with appropriate KCl concentration and etching time. Uniform ZnO nanotube can be achieved formed when the ZnO nanorods were immersed in 4M KCl aqueous with 13 hrs. The luminescence character of nanorods and nanotubes were investigated by the temperature dependence photoluminescence spectra. Two peaks (excitonic peak and deep level emission) were observed in both morphologies. However, the excitonic peak intensity (EI) and defect related emission peak intensity (DI) ratio of ZnO nanotubes increase when the etching time increases. The intensity ratio variation of EI to DI maybe can be attributed to the surface state of ZnO are increased and oxygen defects of ZnO are decreased in the etching process. The potential application of ZnO nanotubes is demonstrated.
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