{"title":"超低功耗应用的低驱动电压纳米机电开关装置","authors":"Krutikesh Sahoo, P. Sen, N. Bhat","doi":"10.1109/icee44586.2018.8938003","DOIUrl":null,"url":null,"abstract":"In this paper we propose a two-terminal diode type nano-electro-mechanical (NEM) switch with a low actuation voltage of about 2.5 V and sharp subthreshold slope of $\\sim 2.4$ mV/decade obtained by reducing the air gap between electrodes. This type of switch will find applications in non-volatile memory, NEM resonators and sensors.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"10 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low Actuation Voltage Nano-Electro-Mechanical Switching Device for Ultra-Low Power Applications\",\"authors\":\"Krutikesh Sahoo, P. Sen, N. Bhat\",\"doi\":\"10.1109/icee44586.2018.8938003\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we propose a two-terminal diode type nano-electro-mechanical (NEM) switch with a low actuation voltage of about 2.5 V and sharp subthreshold slope of $\\\\sim 2.4$ mV/decade obtained by reducing the air gap between electrodes. This type of switch will find applications in non-volatile memory, NEM resonators and sensors.\",\"PeriodicalId\":6590,\"journal\":{\"name\":\"2018 4th IEEE International Conference on Emerging Electronics (ICEE)\",\"volume\":\"10 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 4th IEEE International Conference on Emerging Electronics (ICEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/icee44586.2018.8938003\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/icee44586.2018.8938003","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low Actuation Voltage Nano-Electro-Mechanical Switching Device for Ultra-Low Power Applications
In this paper we propose a two-terminal diode type nano-electro-mechanical (NEM) switch with a low actuation voltage of about 2.5 V and sharp subthreshold slope of $\sim 2.4$ mV/decade obtained by reducing the air gap between electrodes. This type of switch will find applications in non-volatile memory, NEM resonators and sensors.
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