K. V. Rao, F. Khaja, C. Ni, S. Sharma, B. Zheng, J. Ramalingam, J. Gelatos, J. Lei, A. Mayur, R. Hung, V. Banthia, A. Brand, N. Variam
{"title":"用于降低NMOS TiSix接触电阻率的损伤工程Se植入物","authors":"K. V. Rao, F. Khaja, C. Ni, S. Sharma, B. Zheng, J. Ramalingam, J. Gelatos, J. Lei, A. Mayur, R. Hung, V. Banthia, A. Brand, N. Variam","doi":"10.1109/IIT.2014.6939955","DOIUrl":null,"url":null,"abstract":"Low specific contact resistivity (7E-9 Ohm.cm2) was achieved for contacts with TiSix to in-situ epitaxially doped Si:P n-SD regions by use of Se implantation prior to Ti deposition. The key to this achievement is the optimization of implant energy and dose, and use of millisecond laser anneal to heal the implant damage, while allowing sufficient inter-mixing of Ti, Si, Se and P atoms across a smooth TiSix/Si:P interface, to realize the SBH-lowering benefits of Se.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"26 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Damage engineered Se implant for NMOS TiSix contact resistivity reduction\",\"authors\":\"K. V. Rao, F. Khaja, C. Ni, S. Sharma, B. Zheng, J. Ramalingam, J. Gelatos, J. Lei, A. Mayur, R. Hung, V. Banthia, A. Brand, N. Variam\",\"doi\":\"10.1109/IIT.2014.6939955\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Low specific contact resistivity (7E-9 Ohm.cm2) was achieved for contacts with TiSix to in-situ epitaxially doped Si:P n-SD regions by use of Se implantation prior to Ti deposition. The key to this achievement is the optimization of implant energy and dose, and use of millisecond laser anneal to heal the implant damage, while allowing sufficient inter-mixing of Ti, Si, Se and P atoms across a smooth TiSix/Si:P interface, to realize the SBH-lowering benefits of Se.\",\"PeriodicalId\":6548,\"journal\":{\"name\":\"2014 20th International Conference on Ion Implantation Technology (IIT)\",\"volume\":\"26 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 20th International Conference on Ion Implantation Technology (IIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIT.2014.6939955\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 20th International Conference on Ion Implantation Technology (IIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIT.2014.6939955","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Damage engineered Se implant for NMOS TiSix contact resistivity reduction
Low specific contact resistivity (7E-9 Ohm.cm2) was achieved for contacts with TiSix to in-situ epitaxially doped Si:P n-SD regions by use of Se implantation prior to Ti deposition. The key to this achievement is the optimization of implant energy and dose, and use of millisecond laser anneal to heal the implant damage, while allowing sufficient inter-mixing of Ti, Si, Se and P atoms across a smooth TiSix/Si:P interface, to realize the SBH-lowering benefits of Se.
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