{"title":"一种w波段SiGe功率放大器，95GHz时Psat为23 dBm, PAE为16.8%","authors":"C. R. Chappidi, K. Sengupta","doi":"10.1109/MWSYM.2017.8058968","DOIUrl":null,"url":null,"abstract":"This paper presents a double-stacked four-way combined W-band power amplifier (PA) in 0.13μm SiGe BiCMOS process with 3dB small-signal bandwidth between 86.6–103.3GHz. This chip achieves a saturated power (Psat) of 23 dBm at a peak PAE of 16.8% at 95 GHz with Psat of more than 21 dBm across 85105 GHz. To the best of the authors' knowledge, this is the highest efficiency reported for silicon-based PAs at these frequencies with output power greater than 23 dBm. This paper also demonstrates the modulation measurements of constellation schemes QPSK, 16-QAM and 64-QAM in the W-Band with data rates up to 12Gbps.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":"{\"title\":\"A W-band SiGe power amplifier with Psat of 23 dBm and PAE of 16.8% at 95GHz\",\"authors\":\"C. R. Chappidi, K. Sengupta\",\"doi\":\"10.1109/MWSYM.2017.8058968\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a double-stacked four-way combined W-band power amplifier (PA) in 0.13μm SiGe BiCMOS process with 3dB small-signal bandwidth between 86.6–103.3GHz. This chip achieves a saturated power (Psat) of 23 dBm at a peak PAE of 16.8% at 95 GHz with Psat of more than 21 dBm across 85105 GHz. To the best of the authors' knowledge, this is the highest efficiency reported for silicon-based PAs at these frequencies with output power greater than 23 dBm. This paper also demonstrates the modulation measurements of constellation schemes QPSK, 16-QAM and 64-QAM in the W-Band with data rates up to 12Gbps.\",\"PeriodicalId\":6481,\"journal\":{\"name\":\"2017 IEEE MTT-S International Microwave Symposium (IMS)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"22\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE MTT-S International Microwave Symposium (IMS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2017.8058968\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE MTT-S International Microwave Symposium (IMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2017.8058968","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A W-band SiGe power amplifier with Psat of 23 dBm and PAE of 16.8% at 95GHz
This paper presents a double-stacked four-way combined W-band power amplifier (PA) in 0.13μm SiGe BiCMOS process with 3dB small-signal bandwidth between 86.6–103.3GHz. This chip achieves a saturated power (Psat) of 23 dBm at a peak PAE of 16.8% at 95 GHz with Psat of more than 21 dBm across 85105 GHz. To the best of the authors' knowledge, this is the highest efficiency reported for silicon-based PAs at these frequencies with output power greater than 23 dBm. This paper also demonstrates the modulation measurements of constellation schemes QPSK, 16-QAM and 64-QAM in the W-Band with data rates up to 12Gbps.
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