{"title":"用于先进器件制造的毫秒退火","authors":"Y. Wang, Shaoyin Chen, Xiaoru Wang, M. Shen","doi":"10.1109/IIT.2014.6940020","DOIUrl":null,"url":null,"abstract":"Evolution of CMOS technology has created new opportunities for millisecond annealing beyond the traditional dopant activation and junction formation. Strain enhancement, gate stack property modifications, silicide formation, and contact interface engineering are a few examples. In this paper, we review various applications of millisecond annealing for advanced logic device fabrications. Extendibility to new materials, opportunities and challenges for DRAM applications are also discussed.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"80 1","pages":"1-6"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Millisecond annealing for advanced device fabrications\",\"authors\":\"Y. Wang, Shaoyin Chen, Xiaoru Wang, M. Shen\",\"doi\":\"10.1109/IIT.2014.6940020\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Evolution of CMOS technology has created new opportunities for millisecond annealing beyond the traditional dopant activation and junction formation. Strain enhancement, gate stack property modifications, silicide formation, and contact interface engineering are a few examples. In this paper, we review various applications of millisecond annealing for advanced logic device fabrications. Extendibility to new materials, opportunities and challenges for DRAM applications are also discussed.\",\"PeriodicalId\":6548,\"journal\":{\"name\":\"2014 20th International Conference on Ion Implantation Technology (IIT)\",\"volume\":\"80 1\",\"pages\":\"1-6\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 20th International Conference on Ion Implantation Technology (IIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIT.2014.6940020\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 20th International Conference on Ion Implantation Technology (IIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIT.2014.6940020","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Millisecond annealing for advanced device fabrications
Evolution of CMOS technology has created new opportunities for millisecond annealing beyond the traditional dopant activation and junction formation. Strain enhancement, gate stack property modifications, silicide formation, and contact interface engineering are a few examples. In this paper, we review various applications of millisecond annealing for advanced logic device fabrications. Extendibility to new materials, opportunities and challenges for DRAM applications are also discussed.
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