R. Leon, M. Kamińska, Z. Liliental-Weber, K. Yu, M. Chandramouli, E. Weber
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Results from electrical measurements, as well as lattice site determination, structural, and X-ray energy dispersive studies of Cu doping on InP, are presented. Hall measurements of carrier concentration as a function of inverse temperature show that InP:Cu exhibits semi-insulating behavior after diffusion with Cu at temperatures exceeding 700 degrees C. Similar measurements of carrier concentration and mobility show that samples exhibited properties typical of hopping conductivity when diffused at temperatures below 700 degrees C. Particle induced X-ray emission (PIXE) performed with channeling in the <110>, <100>, and <111> directions shows a random distribution of Cu, which is typically seen when precipitates are present. Transmission electron microscopy (TEM) indicates the presence of numerous small spherical crystalline precipitates in the samples, and microdiffraction and energy dispersion spectroscopy (EDS) analysis indicates that the most probable phase of these precipitates is In/sub x/Cu.<>
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