锗含量对SiGe氧化特性及锗损失的影响

2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2020-08-01 DOI:10.1109/ASMC49169.2020.9185260

Meejung Kwon, Song Han, Je Hyeok Ryu, Chiyoung Lee, Yoon Young Lee, Byung Hoon Kim

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引用次数: 0

摘要

本文研究了干条法外延硅锗($Si_{1-x}Ge_{x}$)薄膜的氧化行为。在这项研究中，通过$H_{2}/N_{2}$等离子体产生的氢自由基，已知的抑制表面氧化，进行了研究。根据锗含量比较了氧化行为和锗损失率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Characteristics of SiGe Oxidation and Ge Loss according to Ge Content

This paper investigates the oxidation behavior of Epitaxial Silicon Germanium ($Si_{1-x}Ge_{x}$) thin-film during a dry strip process. In this study hydrogen radicals generated through $H_{2}/N_{2}$ plasma, which is known to suppress surface oxidation, was examined. Oxidation behavior and Ge loss rate are compared according to Ge content.

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2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)

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