在腔室测量和光学发射光谱之间的过程时间延迟估计:APC:先进的过程控制

T. Ning, CH Huang, J. Jensen, V. Wong, H. Chan
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引用次数: 0

摘要

本文利用交叉光谱分析估计了腔室测量值与发射光谱(OES)数据之间的时间延迟。控制变量与关键变量之间的时间延迟为蚀刻控制过程提供了有用的反馈。在我们的研究中,我们发现在蚀刻过程中增加腔室压力会导致腔室压力和偏置电压测量之间的一次谐波延时增加,而腔室压力和选定的OES波段之间的延时减少。
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Estimation of Process Time Delay between Chamber Measurements and Optical Emission Spectroscopy : APC: Advanced Process Control
Time delay between chamber measurements and optical emission spectroscopy (OES) data were estimated using the cross-spectral analysis in this paper. The time delay between control and key variables provides useful feedback in etching control processes. We found in our study that ramping the chamber pressure during the etch process leads to an increasing time delay at the first harmonic between the chamber pressure and bias voltage measurements and a decreasing time delay between the chamber pressure and a selected OES wave band.
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