创历史新低的隧道结比电阻率(<3×10−4 Ωcm2)在GaN带间隧道结

70th Device Research Conference Pub Date : 2012-06-18 DOI:10.1109/DRC.2012.6257007

S. Krishnamoorthy, F. Akyol, Jing Yang, P. Park, R. Myers, S. Rajan

{"title":"创历史新低的隧道结比电阻率(<3×10−4 Ωcm2)在GaN带间隧道结","authors":"S. Krishnamoorthy, F. Akyol, Jing Yang, P. Park, R. Myers, S. Rajan","doi":"10.1109/DRC.2012.6257007","DOIUrl":null,"url":null,"abstract":"We report on the design, fabrication, and characterization of record high efficiency inter-band tunnel junctions in GaN. We have achieved tunnel junction specific resistivity values as low as 3×10-4 Ωcm2 by using polarization engineered GaN/InGaN/GaN tunnel junctions. An alternate approach of using rare earth nitride (GdN) nano-islands embedded in degenerately doped GaN p n junction has resulted in tunnel junction specific resistivity of 2.7×10-3 Ωcm2. This is the first report of mid gap states assisted tunneling in GaN.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"4 1","pages":"157-158"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Record low tunnel junction specific resistivity (< 3×10−4 Ωcm2) in GaN inter-band tunnel junctions\",\"authors\":\"S. Krishnamoorthy, F. Akyol, Jing Yang, P. Park, R. Myers, S. Rajan\",\"doi\":\"10.1109/DRC.2012.6257007\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on the design, fabrication, and characterization of record high efficiency inter-band tunnel junctions in GaN. We have achieved tunnel junction specific resistivity values as low as 3×10-4 Ωcm2 by using polarization engineered GaN/InGaN/GaN tunnel junctions. An alternate approach of using rare earth nitride (GdN) nano-islands embedded in degenerately doped GaN p n junction has resulted in tunnel junction specific resistivity of 2.7×10-3 Ωcm2. This is the first report of mid gap states assisted tunneling in GaN.\",\"PeriodicalId\":6808,\"journal\":{\"name\":\"70th Device Research Conference\",\"volume\":\"4 1\",\"pages\":\"157-158\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"70th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2012.6257007\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"70th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2012.6257007","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们报道了氮化镓中创纪录高效率带间隧道结的设计、制造和表征。通过使用极化工程GaN/InGaN/GaN隧道结，我们已经实现了低至3×10-4 Ωcm2的隧道结比电阻率值。利用稀土氮化物(GdN)纳米岛嵌入简并掺杂GaN p n结的另一种方法导致隧道结的比电阻率为2.7×10-3 Ωcm2。这是氮化镓中隙态辅助隧穿的首次报道。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Record low tunnel junction specific resistivity (< 3×10−4 Ωcm2) in GaN inter-band tunnel junctions

We report on the design, fabrication, and characterization of record high efficiency inter-band tunnel junctions in GaN. We have achieved tunnel junction specific resistivity values as low as 3×10^-4 Ωcm² by using polarization engineered GaN/InGaN/GaN tunnel junctions. An alternate approach of using rare earth nitride (GdN) nano-islands embedded in degenerately doped GaN p n junction has resulted in tunnel junction specific resistivity of 2.7×10^-3 Ωcm². This is the first report of mid gap states assisted tunneling in GaN.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

70th Device Research Conference

自引率

0.00%

发文量

期刊最新文献

Enhancement-mode Al045Ga0.55N/Al0.3Ga0.7N High Electron Mobility Transistor with p-Al0.3Ga0.7N Gate CMOS-compatible Ti/Al ohmic contacts (R c ° C) Role of screening, heating, and dielectrics on high-field transport in graphene Electrical control of nuclear-spin-induced Hall voltage in an inverted InAs heterostructure Piezotronics and piezo-phototronics