以Al和Ti为栅电极的sco基MIS结构的电学研究

2013 Spanish Conference on Electron Devices Pub Date : 2013-03-21 DOI:10.1109/CDE.2013.6481398

H. García, H. Castán, S. Dueñas, L. Bailón, P. C. Feijoo, M. Pampillón, E. Andrés

{"title":"以Al和Ti为栅电极的sco基MIS结构的电学研究","authors":"H. García, H. Castán, S. Dueñas, L. Bailón, P. C. Feijoo, M. Pampillón, E. Andrés","doi":"10.1109/CDE.2013.6481398","DOIUrl":null,"url":null,"abstract":"The electrical properties of ScO-based MIS structures have been electrically studied. The high-k films were deposited by high pressure sputtering (HPS). Aluminum and Ti were used as gate electrodes. Defects inside the oxide seem to be reduced when increasing the chamber pressure. However, leakage current density increases in this case.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"20 1","pages":"285-288"},"PeriodicalIF":0.0000,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrical study of ScO-based MIS structures using Al and Ti as gate electrodes\",\"authors\":\"H. García, H. Castán, S. Dueñas, L. Bailón, P. C. Feijoo, M. Pampillón, E. Andrés\",\"doi\":\"10.1109/CDE.2013.6481398\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The electrical properties of ScO-based MIS structures have been electrically studied. The high-k films were deposited by high pressure sputtering (HPS). Aluminum and Ti were used as gate electrodes. Defects inside the oxide seem to be reduced when increasing the chamber pressure. However, leakage current density increases in this case.\",\"PeriodicalId\":6614,\"journal\":{\"name\":\"2013 Spanish Conference on Electron Devices\",\"volume\":\"20 1\",\"pages\":\"285-288\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-03-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 Spanish Conference on Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CDE.2013.6481398\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 Spanish Conference on Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CDE.2013.6481398","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文对钴基MIS结构的电学性能进行了研究。采用高压溅射(HPS)法制备了高k薄膜。采用铝和钛作为栅电极。当腔压力增加时，氧化物内部的缺陷似乎减少了。然而，在这种情况下，泄漏电流密度增加。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Electrical study of ScO-based MIS structures using Al and Ti as gate electrodes

The electrical properties of ScO-based MIS structures have been electrically studied. The high-k films were deposited by high pressure sputtering (HPS). Aluminum and Ti were used as gate electrodes. Defects inside the oxide seem to be reduced when increasing the chamber pressure. However, leakage current density increases in this case.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2013 Spanish Conference on Electron Devices

自引率

0.00%

发文量

期刊最新文献

CMOS VCO design optimization using reliable 3D electromagnetic inductor models Gadolinium scandate by high pressure sputtering as a high-k dielectric Macroporous silicon microreactor for the preferential oxidation of CO Trends in crystalline silicon growth for low cost and efficient photovoltaic cells Nanohole particle filling by electrospray