{"title":"基于MOCVD的1.55 μ m无源波导集成偏振不敏感半导体光放大器","authors":"G. Glastre, D. Rondi, A. Enard, R. Blondeau","doi":"10.1109/ICIPRM.1991.147464","DOIUrl":null,"url":null,"abstract":"The fabrication and performance characteristics of semiconductor optical amplifiers integrated with passive waveguides are described. Chip gain of >21 dB, a gain ripple of <0.7 dB, and a gain difference of <0.5 dB between TE and TM modes were observed. It is shown that polarization insensitive amplifier/waveguides fabricated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) can provide fiber-to-fiber gains of around 8 dB, high enough to fully compensate for losses generated in directional couplers or a 4*4 matrix, as well as low gain ripple.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"412 1","pages":"672-675"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Polarization insensitive 1.55 mu m semiconductor optical amplifier integrated with passive waveguides made by MOCVD\",\"authors\":\"G. Glastre, D. Rondi, A. Enard, R. Blondeau\",\"doi\":\"10.1109/ICIPRM.1991.147464\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The fabrication and performance characteristics of semiconductor optical amplifiers integrated with passive waveguides are described. Chip gain of >21 dB, a gain ripple of <0.7 dB, and a gain difference of <0.5 dB between TE and TM modes were observed. It is shown that polarization insensitive amplifier/waveguides fabricated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) can provide fiber-to-fiber gains of around 8 dB, high enough to fully compensate for losses generated in directional couplers or a 4*4 matrix, as well as low gain ripple.<<ETX>>\",\"PeriodicalId\":6444,\"journal\":{\"name\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"volume\":\"412 1\",\"pages\":\"672-675\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1991.147464\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147464","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Polarization insensitive 1.55 mu m semiconductor optical amplifier integrated with passive waveguides made by MOCVD
The fabrication and performance characteristics of semiconductor optical amplifiers integrated with passive waveguides are described. Chip gain of >21 dB, a gain ripple of <0.7 dB, and a gain difference of <0.5 dB between TE and TM modes were observed. It is shown that polarization insensitive amplifier/waveguides fabricated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) can provide fiber-to-fiber gains of around 8 dB, high enough to fully compensate for losses generated in directional couplers or a 4*4 matrix, as well as low gain ripple.<>
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