Z. Wang, Pei-Yuan Chiang, Peyman Nazari, Chun-Cheng Wang, Zhiming Chen, P. Heydari
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引用次数: 47
摘要
亚太赫兹频率范围内未充分利用的频谱可以实现颠覆性应用,包括10Gb/s芯片对芯片无线通信和成像/光谱。由于特征尺寸和器件fT/fmax的积极缩放,纳米级CMOS技术有可能在该频率范围内集成复杂的系统。例如,已经报道了CMOS亚太赫兹信号源和trx[1-4],它们采用了分布式有源辐射器(DAR)和超谐波信号发生器等技术。然而,在先前的工作中报道的CMOS亚太赫兹trx缺乏RF放大,导致效率低(因此更高的功耗)和高噪声系数(NF)。本文通过在32nm SOI CMOS工艺(fT/fmax=250/350GHz)中演示具有开关键控(OOK)调制的210GHz TRX,该调制包含2×2 TX天线阵列、2×2空间组合功率放大器(PA)、基频VCO和低噪声放大器(LNA)。
A 210GHz fully integrated differential transceiver with fundamental-frequency VCO in 32nm SOI CMOS
The vastly under-utilized spectrum in the sub-THz frequency range enables disruptive applications including 10Gb/s chip-to-chip wireless communications and imaging/spectroscopy. Owing to aggressive scaling in feature size and device fT/fmax, nanoscale CMOS technology potentially enables integration of sophisticated systems at this frequency range. For example, CMOS sub-THz signal sources and TRXs have been reported [1-4], employing techniques such as distributed active radiator (DAR) and super-harmonic signal generator. The lack of RF amplification in CMOS sub-THz TRXs reported in prior work, however, results in low efficiency (and thus higher power dissipation), and high noise-figure (NF). This paper addresses these issues by demonstrating a 210GHz TRX with on-off-keying (OOK) modulation incorporating a 2×2 TX antenna array, a 2×2 spatial combining power amplifier (PA), a fundamental frequency VCO, and a low noise amplifier (LNA) in a 32nm SOI CMOS process (fT/fmax=250/350GHz).