{"title":"基于协方差矩阵自适应进化策略的极紫外光刻掩模缺陷补偿优化","authors":"Heng Zhang, Sikun Li, Xiangzhao Wang, Chaoxing Yang, Wei Cheng","doi":"10.1117/1.JMM.17.4.043505","DOIUrl":null,"url":null,"abstract":"Abstract. Background: Defect compensation is one of the enabling techniques for high-volume manufacturing using extreme ultraviolet lithography. Aim: The advanced evolution strategy algorithm based on covariance matrix adaption is applied to compensation optimization to improve the convergence efficiency and algorithm operability. Approach: The advanced algorithm optimizes the solution population by sampling from the self-adapted covariance matrix of mutation distribution. Results: Optimization simulations for three different masks validated the algorithm’s advantage in convergence efficiency and searching ability compared with original differential evolution, evolution strategy, genetic algorithm (GA), and Nelder–Mead simplex method. The advanced algorithm employs fewer user-defined parameters and is proved to be robust to variations of these parameters. Conclusions: The advanced algorithm obtains better results compared with GA for best-focus, through-focus, and complex-pattern optimizations. With the inherent invariance property, appropriate operability, and robustness, we recommend applying this algorithm to other lithography optimization problems.","PeriodicalId":16522,"journal":{"name":"Journal of Micro/Nanolithography, MEMS, and MOEMS","volume":"1 1","pages":"043505 - 043505"},"PeriodicalIF":1.5000,"publicationDate":"2018-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Optimization of defect compensation for extreme ultraviolet lithography mask by covariance-matrix-adaption evolution strategy\",\"authors\":\"Heng Zhang, Sikun Li, Xiangzhao Wang, Chaoxing Yang, Wei Cheng\",\"doi\":\"10.1117/1.JMM.17.4.043505\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Abstract. Background: Defect compensation is one of the enabling techniques for high-volume manufacturing using extreme ultraviolet lithography. Aim: The advanced evolution strategy algorithm based on covariance matrix adaption is applied to compensation optimization to improve the convergence efficiency and algorithm operability. Approach: The advanced algorithm optimizes the solution population by sampling from the self-adapted covariance matrix of mutation distribution. Results: Optimization simulations for three different masks validated the algorithm’s advantage in convergence efficiency and searching ability compared with original differential evolution, evolution strategy, genetic algorithm (GA), and Nelder–Mead simplex method. The advanced algorithm employs fewer user-defined parameters and is proved to be robust to variations of these parameters. Conclusions: The advanced algorithm obtains better results compared with GA for best-focus, through-focus, and complex-pattern optimizations. With the inherent invariance property, appropriate operability, and robustness, we recommend applying this algorithm to other lithography optimization problems.\",\"PeriodicalId\":16522,\"journal\":{\"name\":\"Journal of Micro/Nanolithography, MEMS, and MOEMS\",\"volume\":\"1 1\",\"pages\":\"043505 - 043505\"},\"PeriodicalIF\":1.5000,\"publicationDate\":\"2018-12-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Micro/Nanolithography, MEMS, and MOEMS\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1117/1.JMM.17.4.043505\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Micro/Nanolithography, MEMS, and MOEMS","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1117/1.JMM.17.4.043505","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Optimization of defect compensation for extreme ultraviolet lithography mask by covariance-matrix-adaption evolution strategy
Abstract. Background: Defect compensation is one of the enabling techniques for high-volume manufacturing using extreme ultraviolet lithography. Aim: The advanced evolution strategy algorithm based on covariance matrix adaption is applied to compensation optimization to improve the convergence efficiency and algorithm operability. Approach: The advanced algorithm optimizes the solution population by sampling from the self-adapted covariance matrix of mutation distribution. Results: Optimization simulations for three different masks validated the algorithm’s advantage in convergence efficiency and searching ability compared with original differential evolution, evolution strategy, genetic algorithm (GA), and Nelder–Mead simplex method. The advanced algorithm employs fewer user-defined parameters and is proved to be robust to variations of these parameters. Conclusions: The advanced algorithm obtains better results compared with GA for best-focus, through-focus, and complex-pattern optimizations. With the inherent invariance property, appropriate operability, and robustness, we recommend applying this algorithm to other lithography optimization problems.