{"title":"基于mhz频段多谐波有源拉技术的ghz频段高效整流器设计","authors":"M. Machida, R. Ishikawa, Y. Takayama, K. Honjo","doi":"10.1109/MWSYM.2018.8439693","DOIUrl":null,"url":null,"abstract":"Ahstract-A MHz-band multi-harmonic active source-pull technique has been developed for GHz-band high-efficiency rectifier design. The active load-pull technique is usually used for high-efficiency amplifier design. This method has been successfully diverted to rectifier design by carefully considering an optimum source impedance estimation at the fundamental frequency existing at an input source signal. In addition, an intrinsic nonlinear resistance as a rectifying element with an operation frequency of a GHz band can be directly extracted by the MHz-band measurement, due to negligible parasitic reactance elements. The method has been verified for a fabricated 2.45-GHz GaAs pHEMT rectifier.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"14 1","pages":"1134-1137"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"GHz-Band High-Efficiency Rectifier Design Based on MHz-Band Multi - Harmonic Active Source-Pull Technique\",\"authors\":\"M. Machida, R. Ishikawa, Y. Takayama, K. Honjo\",\"doi\":\"10.1109/MWSYM.2018.8439693\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ahstract-A MHz-band multi-harmonic active source-pull technique has been developed for GHz-band high-efficiency rectifier design. The active load-pull technique is usually used for high-efficiency amplifier design. This method has been successfully diverted to rectifier design by carefully considering an optimum source impedance estimation at the fundamental frequency existing at an input source signal. In addition, an intrinsic nonlinear resistance as a rectifying element with an operation frequency of a GHz band can be directly extracted by the MHz-band measurement, due to negligible parasitic reactance elements. The method has been verified for a fabricated 2.45-GHz GaAs pHEMT rectifier.\",\"PeriodicalId\":6675,\"journal\":{\"name\":\"2018 IEEE/MTT-S International Microwave Symposium - IMS\",\"volume\":\"14 1\",\"pages\":\"1134-1137\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE/MTT-S International Microwave Symposium - IMS\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2018.8439693\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE/MTT-S International Microwave Symposium - IMS","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2018.8439693","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
GHz-Band High-Efficiency Rectifier Design Based on MHz-Band Multi - Harmonic Active Source-Pull Technique
Ahstract-A MHz-band multi-harmonic active source-pull technique has been developed for GHz-band high-efficiency rectifier design. The active load-pull technique is usually used for high-efficiency amplifier design. This method has been successfully diverted to rectifier design by carefully considering an optimum source impedance estimation at the fundamental frequency existing at an input source signal. In addition, an intrinsic nonlinear resistance as a rectifying element with an operation frequency of a GHz band can be directly extracted by the MHz-band measurement, due to negligible parasitic reactance elements. The method has been verified for a fabricated 2.45-GHz GaAs pHEMT rectifier.
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