采用电源电压调谐的宽频扇入多米诺逻辑电路减轻NBTI影响的电路级技术

S. Narang
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引用次数: 3

摘要

晶体管老化一直是纳米技术的一个主要问题,它会导致性能下降和可靠性问题。pMOS晶体管的老化是由于负偏置温度不稳定性(NBTI)造成的,这是可靠性的主要威胁,因为我们在追求低功耗和高性能的过程中,积极缩小晶体管的几何形状。克服老化效应需要额外的电力费用,这反过来又加剧了电力和加热问题。我提出了一种自适应供电电压(ASV)方案,作为一种可论证的有效的变化弹性方法,因为它试图仅在老化的负面影响较强的地方分配电力资源。在包括电流比较多米诺(CCD)在内的一系列多米诺逻辑电路上实施所提出的方法后,我通过适当地分配电源电压来减轻延迟问题的增加,以便在以非常低的功率余量为代价的10年运行寿命之后连续满足延迟规格。在SILVACO EDA工具中,采用BSIM4v4.7模型和32 nm预测技术模型,在2 GHz频率和0.9V标称电源电压下进行了仿真。该方法已在32位和64位OR门以及32位比较器上实现,结果值得注意。
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Circuit level technique for mitigating effects of NBTI for wide fan-in domino logic circuits using supply voltage tuning
Transistor ageing has been a major problem as far as nanometre technology is concerned which leads to performance degradation and reliability issues. Ageing in pMOS transistor takes place due to Negative bias temperature instability (NBTI) which is a major threat in reliability as Iscale down the transistor geometries aggressively in our quest for low power and high performance. Overcoming ageing effect requires additional power expense, which in turn aggravates the power and heating problem. I propose an adaptive supply voltage (ASV) scheme as an arguably power efficient approach for variation resilience since it attempts to allocate power resources only where the negative effect of ageing is strong. Upon implementing the proposed approach on a host of domino logic circuits which include Current comparison domino (CCD) Ihave mitigated the rise in delay problem by suitably allocating a supply voltage so that the delay specifications are continuously met even after a lifespan of 10 years of operation at the expense of very low power headroom. Simulations have been performed using the BSIM4v4.7 model & 32 nm predictive technology model in SILVACO EDA tool at a frequency of 2 GHz and nominal supply voltage of 0.9V. The proposed approach has been implemented on 32 bit & 64 bit OR gates and also on 32 bit comparator and the results have been noteworthy.
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