{"title":"反应离子束溅射制备Er掺杂ZnO的生长与表征","authors":"Chung-Chi Liau, L. Chao","doi":"10.1109/INEC.2010.5425089","DOIUrl":null,"url":null,"abstract":"Er doped ZnO (EZO) has been deposited on Si substrate at 500°C by reactive ion beam sputtering utilizing a capillaritron ion source at various oxygen partial flow rates. All the EZO films exhibit a preferred (002) growth direction. Maximum Er emission at 984 nm (4I11/2 to 4I15/2) was achieved from EZO deposited with 12.5% oxygen partial flow rate. XPS analysis of the O 1s core level shows an additional peak centered at 532.5 eV, indicating the presence of erbium oxide.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"104 1","pages":"976-977"},"PeriodicalIF":0.0000,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Growth and characterization of Er doped ZnO prepared by reactive ion beam sputtering\",\"authors\":\"Chung-Chi Liau, L. Chao\",\"doi\":\"10.1109/INEC.2010.5425089\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Er doped ZnO (EZO) has been deposited on Si substrate at 500°C by reactive ion beam sputtering utilizing a capillaritron ion source at various oxygen partial flow rates. All the EZO films exhibit a preferred (002) growth direction. Maximum Er emission at 984 nm (4I11/2 to 4I15/2) was achieved from EZO deposited with 12.5% oxygen partial flow rate. XPS analysis of the O 1s core level shows an additional peak centered at 532.5 eV, indicating the presence of erbium oxide.\",\"PeriodicalId\":6390,\"journal\":{\"name\":\"2010 3rd International Nanoelectronics Conference (INEC)\",\"volume\":\"104 1\",\"pages\":\"976-977\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-03-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 3rd International Nanoelectronics Conference (INEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INEC.2010.5425089\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 3rd International Nanoelectronics Conference (INEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INEC.2010.5425089","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Growth and characterization of Er doped ZnO prepared by reactive ion beam sputtering
Er doped ZnO (EZO) has been deposited on Si substrate at 500°C by reactive ion beam sputtering utilizing a capillaritron ion source at various oxygen partial flow rates. All the EZO films exhibit a preferred (002) growth direction. Maximum Er emission at 984 nm (4I11/2 to 4I15/2) was achieved from EZO deposited with 12.5% oxygen partial flow rate. XPS analysis of the O 1s core level shows an additional peak centered at 532.5 eV, indicating the presence of erbium oxide.
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