L. Aina, M. Mattingly, M. Burgess, J. O'connor, S. Shastry, D. Hill, J. Salerno, A. Davis, J. P. Lorenzo
{"title":"用OMVPE在硅上生长高纯度InP和制备高灵敏度InP/GaInAs异质结光电晶体管","authors":"L. Aina, M. Mattingly, M. Burgess, J. O'connor, S. Shastry, D. Hill, J. Salerno, A. Davis, J. P. Lorenzo","doi":"10.1109/ICIPRM.1991.147307","DOIUrl":null,"url":null,"abstract":"The growth of high-purity InP on Si and the fabrication of high-speed and high-sensitivity InP/GaInAs heterojunction phototransistors using InP grown on Si by organometallic vapor-phase epitaxy (OMVPE) are described. It is shown that high-quality InP can be grown on Si by optimizing the thickness of a GaAs intermediate layer between the InP and Si. A combination of high speed and high sensitivity can be achieved with small-area InP/GaInAs heterojunction phototransistors grown on Si. High-purity InP-on-Si was grown with an electron mobility as high as 4000 cm/sup 2//V-s at 300 K and 25000 cm/sup 2//V-s at 77 K. The residual concentrations are as low as 6*10/sup 14/ cm/sup -3/. The quality of the material is confirmed by the fabrication of InP/GaInAs heterojunction phototransistors (HPTs) with optical gains of 125 A/W, dark currents as low as 300 pA, and bandwidths of 4.4 GHz.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"30 1","pages":"118-121"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Growth of high purity InP and fabrication of high sensitivity InP/GaInAs heterojunction phototransistors on silicon by OMVPE\",\"authors\":\"L. Aina, M. Mattingly, M. Burgess, J. O'connor, S. Shastry, D. Hill, J. Salerno, A. Davis, J. P. Lorenzo\",\"doi\":\"10.1109/ICIPRM.1991.147307\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The growth of high-purity InP on Si and the fabrication of high-speed and high-sensitivity InP/GaInAs heterojunction phototransistors using InP grown on Si by organometallic vapor-phase epitaxy (OMVPE) are described. It is shown that high-quality InP can be grown on Si by optimizing the thickness of a GaAs intermediate layer between the InP and Si. A combination of high speed and high sensitivity can be achieved with small-area InP/GaInAs heterojunction phototransistors grown on Si. High-purity InP-on-Si was grown with an electron mobility as high as 4000 cm/sup 2//V-s at 300 K and 25000 cm/sup 2//V-s at 77 K. The residual concentrations are as low as 6*10/sup 14/ cm/sup -3/. The quality of the material is confirmed by the fabrication of InP/GaInAs heterojunction phototransistors (HPTs) with optical gains of 125 A/W, dark currents as low as 300 pA, and bandwidths of 4.4 GHz.<<ETX>>\",\"PeriodicalId\":6444,\"journal\":{\"name\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"volume\":\"30 1\",\"pages\":\"118-121\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1991.147307\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147307","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Growth of high purity InP and fabrication of high sensitivity InP/GaInAs heterojunction phototransistors on silicon by OMVPE
The growth of high-purity InP on Si and the fabrication of high-speed and high-sensitivity InP/GaInAs heterojunction phototransistors using InP grown on Si by organometallic vapor-phase epitaxy (OMVPE) are described. It is shown that high-quality InP can be grown on Si by optimizing the thickness of a GaAs intermediate layer between the InP and Si. A combination of high speed and high sensitivity can be achieved with small-area InP/GaInAs heterojunction phototransistors grown on Si. High-purity InP-on-Si was grown with an electron mobility as high as 4000 cm/sup 2//V-s at 300 K and 25000 cm/sup 2//V-s at 77 K. The residual concentrations are as low as 6*10/sup 14/ cm/sup -3/. The quality of the material is confirmed by the fabrication of InP/GaInAs heterojunction phototransistors (HPTs) with optical gains of 125 A/W, dark currents as low as 300 pA, and bandwidths of 4.4 GHz.<>
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