纳米压印工艺中化学涂层对硅基冲压件纳米图案形成的研究

Tien-Li Chang, Jung-Chang Wang
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引用次数: 0

摘要

本研究的目的是提出一种硅烷分子自组装单层(十八烷基三甲氧基硅烷(CH3(CH2)17Si(OCH3)3): OTS-SAM)作为抗粘涂层,以改善用于纳米压印(NIL)的硅基邮票。本文采用电子束光刻(EBL)技术制备了邮票的纳米结构。硅基邮票上的周期柱纳米图案直径分别为150 nm和200 nm。通过对印迹型聚甲基丙烯酸甲酯(PMMA)薄膜进行化学涂覆处理后的接触角测量,研究了硅基冲压衬底对印迹性能的影响。为了控制所制备的纳米图案的形成,可以进行模拟,以获得该过程中图案变形的影响。此外,本研究利用原子力显微镜(AFM)对硅基和印迹PMMA聚合物纳米结构界面的形貌进行了同步观察。结果表明,在NIL工艺下,硅基纳米图案的抗粘接性能提高了95%以上。
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Study of nanopattern forming with chemical coatings for silicon-based stamp in nanoimprint process
The aim of this study is to present a silane molecule self-assembled monolayer (octadecyltrimethoxysilane (CH3(CH2)17Si(OCH3)3): OTS-SAM) as anti-adhesive coatings to improve of silicon-based stamps for the developed nanoimprint lithography (NIL). In this work, the nanostructures of stamps are fabricated by electron-beam lithography (EBL). The diameters of period pillar nanopatterns on the silicon-based stamps are 150 nm and 200 nm, receptively. The influence of silicon-based stamp substrate can be investigated by contact angle measurement after modifying the chemical coating treatment for imprinted thin polymethyl methacrylate (PMMA) films. To control the forming of fabricated nanopatterns, the simulation can be done to obtain the effects of patterning distortion during this NIL process. In addition, the study employs atomic force microscopy (AFM) to obtain a simultaneous observation for the morphologies of silicon-based and imprinted PMMA polymer nanostructures interface. The results indicate an over 95% improvement for silicon-based nanopatterns with the anti-adhesive properties in NIL process.
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