{"title":"利用TF-IPD技术设计和制造无源元件","authors":"Tsaitzu Lee, Yo-Shen Lin, Chiajiun Chen","doi":"10.1109/IMPACT.2009.5382289","DOIUrl":null,"url":null,"abstract":"In this paper, we develop a low-cost manufacturing technology for RF system-in-package applications. This high-performance process technology for integrated passive devices is achieved by electroplated formed thick Cu metal trace and back-side substrate thinning process on 8-inch glass wafer. This paper first presents investigations for common integration of inductors, resistors, capacitors in this thin film process technology and examines their RF performance. Then, a lowpass filter design for 2.4 GHz ISM band application is also demonstrated. Good RF performance as well as small form factor are achieved.","PeriodicalId":6410,"journal":{"name":"2009 4th International Microsystems, Packaging, Assembly and Circuits Technology Conference","volume":"117 1","pages":"722-725"},"PeriodicalIF":0.0000,"publicationDate":"2009-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Design and fabrication of passive components using TF-IPD technology\",\"authors\":\"Tsaitzu Lee, Yo-Shen Lin, Chiajiun Chen\",\"doi\":\"10.1109/IMPACT.2009.5382289\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we develop a low-cost manufacturing technology for RF system-in-package applications. This high-performance process technology for integrated passive devices is achieved by electroplated formed thick Cu metal trace and back-side substrate thinning process on 8-inch glass wafer. This paper first presents investigations for common integration of inductors, resistors, capacitors in this thin film process technology and examines their RF performance. Then, a lowpass filter design for 2.4 GHz ISM band application is also demonstrated. Good RF performance as well as small form factor are achieved.\",\"PeriodicalId\":6410,\"journal\":{\"name\":\"2009 4th International Microsystems, Packaging, Assembly and Circuits Technology Conference\",\"volume\":\"117 1\",\"pages\":\"722-725\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 4th International Microsystems, Packaging, Assembly and Circuits Technology Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMPACT.2009.5382289\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 4th International Microsystems, Packaging, Assembly and Circuits Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMPACT.2009.5382289","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design and fabrication of passive components using TF-IPD technology
In this paper, we develop a low-cost manufacturing technology for RF system-in-package applications. This high-performance process technology for integrated passive devices is achieved by electroplated formed thick Cu metal trace and back-side substrate thinning process on 8-inch glass wafer. This paper first presents investigations for common integration of inductors, resistors, capacitors in this thin film process technology and examines their RF performance. Then, a lowpass filter design for 2.4 GHz ISM band application is also demonstrated. Good RF performance as well as small form factor are achieved.