{"title":"自组装InAs/GaAs量子点异质结构的亚能级间弛豫特性","authors":"Jiunn-Chyi Lee, Yeu-Jent Hu, Ya-Fen Wu, T. Nee, Jen-Cheng Wang, Jia-Hui Fang","doi":"10.1109/NANO.2007.4601337","DOIUrl":null,"url":null,"abstract":"We investigate the effect of carrier dynamics on the temperature dependence of photoluminescence spectra from InAs/GaAs quantum dot heterostructures with different dot size uniformity. Intersublevel relaxation lifetimes and carrier transferring mechanisms are simulated using a model based on carrier relaxing and thermal emitting of each discrete energy level in the quantum dot system. Calculated relaxation lifetimes are decreasing with temperature and have larger values for samples with lower size uniformity. In the quantitative discussion of carrier dynamics, the influence of thermal redistribution on carrier relaxing process of quantum dot system is demonstrated by our model.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"53 1","pages":"934-937"},"PeriodicalIF":0.0000,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Intersublevel relaxation properties of self-assembled InAs/GaAs quantum dot heterostructures\",\"authors\":\"Jiunn-Chyi Lee, Yeu-Jent Hu, Ya-Fen Wu, T. Nee, Jen-Cheng Wang, Jia-Hui Fang\",\"doi\":\"10.1109/NANO.2007.4601337\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We investigate the effect of carrier dynamics on the temperature dependence of photoluminescence spectra from InAs/GaAs quantum dot heterostructures with different dot size uniformity. Intersublevel relaxation lifetimes and carrier transferring mechanisms are simulated using a model based on carrier relaxing and thermal emitting of each discrete energy level in the quantum dot system. Calculated relaxation lifetimes are decreasing with temperature and have larger values for samples with lower size uniformity. In the quantitative discussion of carrier dynamics, the influence of thermal redistribution on carrier relaxing process of quantum dot system is demonstrated by our model.\",\"PeriodicalId\":6415,\"journal\":{\"name\":\"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)\",\"volume\":\"53 1\",\"pages\":\"934-937\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NANO.2007.4601337\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO.2007.4601337","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Intersublevel relaxation properties of self-assembled InAs/GaAs quantum dot heterostructures
We investigate the effect of carrier dynamics on the temperature dependence of photoluminescence spectra from InAs/GaAs quantum dot heterostructures with different dot size uniformity. Intersublevel relaxation lifetimes and carrier transferring mechanisms are simulated using a model based on carrier relaxing and thermal emitting of each discrete energy level in the quantum dot system. Calculated relaxation lifetimes are decreasing with temperature and have larger values for samples with lower size uniformity. In the quantitative discussion of carrier dynamics, the influence of thermal redistribution on carrier relaxing process of quantum dot system is demonstrated by our model.
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