真空中不同波长固态激光烧蚀硅片

齐立涛 Qi Li-tao
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引用次数: 1

摘要

利用非线性光学晶体谐振产生Nd∶YAG固体激光器,获得了波长分别为532 nm、3555 nm和266 nm的激光。研究了真空条件下3种不同波长激光器对单晶硅的吸收与激光波长的关系以及单晶硅的烧蚀特性。结果表明,单晶硅对100 ~ 370 nm波长范围内的紫外激光有较好的吸收,在相同条件下,532 nm激光烧蚀硅的最小单脉冲能量为30 μJ, 355 nm或266 nm激光烧蚀硅的最小单脉冲能量为15 μJ。532 nm、355 nm和266 nm激光烧蚀硅的烧蚀阈值不同,随着波长的减小,烧蚀阈值变小。
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Different wavelength solid-state laser ablation of silicon wafer in vacuum
Lasers with wavelengths of 532 nm,355 nm and 266 nm are obtained using harmonic generation of a Nd∶ YAG solid-state laser by nonlinear optical crystal. The relationship between the absorption of single crystal silicon and the laser wavelength and ablation characteristics of single crystal silicon by 3 different wavelength lasers under vacuum condition are studied. The results show that single crystal silicon has a good absorption of ultraviolet laser in the wavelength range of 100- 370 nm,and under the same conditions,the minimum single pulse energy for 532 nm laser ablation of silicon is 30 μJ and the minimum single pulse energy for 355 nm or 266 nm laser ablation of silicon is 15 μJ. The ablation threshold values of 532 nm,355 nm and 266 nm laser ablation of silicon are different,which become smaller with the decrease of wavelength.
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