通过纺丝涂层和光刻技术制备微桥,无需蚀刻

F. Zygalsky, I. Von Lampe, S. Götze
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引用次数: 3

摘要

用简单的旋涂技术制备高分子金属前驱体HTSC薄膜是可能的。该方法可用于制备Y-Ba-Cu-O -薄膜和Bi-Sr-Ca-Cu-O-HTSC薄膜。微桥通过光刻技术生成前驱体膜。取消了蚀刻工艺步骤。然后在950℃回火形成超导相,分别在865℃回火。HTSC结构是SNS接触的前一个阶段。在20 μm和200 μm宽的微桥上,Y-Ba-Cu-O的临界温度为82 K, Bi-Sr-Ca-Cu-O的临界温度为108 K。在65k下得到的临界电流密度(jc)为105 A/cm2。
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Microbridge preparation through spincoating and photolithography without etching

It is possible to produce HTSC thin films of polymer metal precursors by the simple spincoating technique. This method can be used to manufacture of Y–Ba–Cu–O- and Bi–Sr–Ca–Cu–O–HTSC thin films. The microbridges are generated into the precursor film by photolithography. The etching process step is cancelled. After that the superconducting phases are formed at 950°C respectively 865°C during the tempering process. The HTSC structures serve as a previous stage for SNS contact. The critical temperatures (Tc) measured on the 20 and 200 μm wide microbridges are 82 K for Y–Ba–Cu–O and 108 K for Bi–Sr–Ca–Cu–O. The critical current density (jc) obtained is 105 A/cm2 for 65 K.

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