Correction for Metastability in the Quantification of PID in Thin-Film Module Testing

A fundamental change in the analysis for the accelerated stress testing of thin-film modules is proposed, whereby power changes due to metastability and other effects that may occur due to the thermal history are removed from the power measurement that we obtain as a function of the applied stress factor. In this work, initial thermal treatment of the module is performed before application of the independent variable stress of system voltage so that any temperature-dependent processes (e.g., diffusion) that affect the module power are largely activated beforehand. Secondly, the power of reference modules normalized to an initial state-undergoing the same thermal and light exposure history but without the applied stress factor such as humidity or voltage bias-is subtracted from that of the stressed modules. For better understanding and appropriate application in standardized tests, the method is demonstrated and discussed for potential-induced degradation testing in view of the parallel-occurring but unrelated physical mechanisms that can lead to confounding power changes in the module.