{"title":"基于软开关技术的电压转换率设计","authors":"Jialong Li, Yuying Wu, Dehong Xu","doi":"10.1109/ITECAsia-Pacific56316.2022.9941846","DOIUrl":null,"url":null,"abstract":"Wide-band-gap devices such as SiC MOSFET and GaN devices have distinct advantages of high speed and lower switching loss. However, they have higher dv/dt and may cause larger EMI noise. In this paper, design of voltage slew rate on SiC MOSFET devices with soft-switching is investigated. The dv/dt of power devices in the three-phase active-clamped zero voltage switching (ZVS) inverter is analyzed. The voltage slew rate of power devices vs. resonant parameters is discussed. Then the design of dv/dt on power devices are proposed. The dv/dt design has been verified through both the simulation and the experiment on the 10 kW/100kHzSiC-based ZVS three phase inverter.","PeriodicalId":45126,"journal":{"name":"Asia-Pacific Journal-Japan Focus","volume":"103 1","pages":"1-6"},"PeriodicalIF":0.2000,"publicationDate":"2022-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Voltage Slew Rate Design With Soft Switching Technique\",\"authors\":\"Jialong Li, Yuying Wu, Dehong Xu\",\"doi\":\"10.1109/ITECAsia-Pacific56316.2022.9941846\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Wide-band-gap devices such as SiC MOSFET and GaN devices have distinct advantages of high speed and lower switching loss. However, they have higher dv/dt and may cause larger EMI noise. In this paper, design of voltage slew rate on SiC MOSFET devices with soft-switching is investigated. The dv/dt of power devices in the three-phase active-clamped zero voltage switching (ZVS) inverter is analyzed. The voltage slew rate of power devices vs. resonant parameters is discussed. Then the design of dv/dt on power devices are proposed. The dv/dt design has been verified through both the simulation and the experiment on the 10 kW/100kHzSiC-based ZVS three phase inverter.\",\"PeriodicalId\":45126,\"journal\":{\"name\":\"Asia-Pacific Journal-Japan Focus\",\"volume\":\"103 1\",\"pages\":\"1-6\"},\"PeriodicalIF\":0.2000,\"publicationDate\":\"2022-10-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Asia-Pacific Journal-Japan Focus\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ITECAsia-Pacific56316.2022.9941846\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"AREA STUDIES\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Asia-Pacific Journal-Japan Focus","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ITECAsia-Pacific56316.2022.9941846","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"AREA STUDIES","Score":null,"Total":0}
Voltage Slew Rate Design With Soft Switching Technique
Wide-band-gap devices such as SiC MOSFET and GaN devices have distinct advantages of high speed and lower switching loss. However, they have higher dv/dt and may cause larger EMI noise. In this paper, design of voltage slew rate on SiC MOSFET devices with soft-switching is investigated. The dv/dt of power devices in the three-phase active-clamped zero voltage switching (ZVS) inverter is analyzed. The voltage slew rate of power devices vs. resonant parameters is discussed. Then the design of dv/dt on power devices are proposed. The dv/dt design has been verified through both the simulation and the experiment on the 10 kW/100kHzSiC-based ZVS three phase inverter.
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