N. Proust, M. Petitjean, S. Cassette, A. Huber, C. Grattepain, F. Plais, B. Agius, J. Perrin
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InP/insulator interface properties: a comparison between UVCVD, DECR PECVD and 13.56 MHz PECVD
SiNH and SiOH have been deposited on InP by ultraviolet chemical vapor deposition (UVCVD), distributed electronic cyclotronic resonance (DECR) plasma-enhanced chemical vapor deposition (PECVD), and pulsed 13.56 MHz PECVD at 250 degrees C. A comparison between deposition techniques is presented in terms of interface composition (XPS), defect creation in InP (ETOCAPS), and secondary ion mass spectrometry (SIMS) profiles on metal-insulator-silicon diodes.<>
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