BSI过程中起屑的原因及改进方法研究

Yurong Cao, Hu Li, Zhe Feng, Zujun Ji, Zhengyuan Zhao, Jessie Y.C. Chen, Youfeng Xu, Xiang Peng, Feng Ji
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引用次数: 0

摘要

从化学机械抛光(CMP)和粘接前第一切边工艺(Trim1)的角度研究了切屑产生的原因及改善方法。晶片边缘模式阶跃高度和晶片边缘轮廓对晶片边缘键合质量的影响是导致晶片起屑的主要原因。增加CMP去除量可以降低步进高度,提高切屑性能。为了获得更好的极边键合质量,载流子晶圆WEE (wafer Edge Exposure)和Trim1宽度的偏置应该固定,从而带来更好的芯片性能。
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A Study of Causes and Improving Methods of Chipping in BSI Process
The causes and improving methods of chipping were studied from CMP (Chemical Mechanical Polishing) and Trim1 (First Trimming process before bonding) perspectives. Chipping is caused by worse wafer edge bonding quality which is impacted by wafer edge pattern step-height and edge profile. Increasing CMP remove amount could reduce step-height and improve chipping performance. Bias of carrier wafer WEE (Wafer Edge Exposure) and Trim1 width should be fixed for better extreme edge bonding quality, which brings better chipping performance.
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