M. Sugiyama, H. Cho, Toprasertpong Kasidit, H. Sodabanlu, Kentaroh Watanabe, Y. Nakano
{"title":"用于高效光伏应用的InGaAs/GaAsP量子阱和线","authors":"M. Sugiyama, H. Cho, Toprasertpong Kasidit, H. Sodabanlu, Kentaroh Watanabe, Y. Nakano","doi":"10.1109/NANO.2016.7751576","DOIUrl":null,"url":null,"abstract":"Layer undulation of InGaAs/GaAs/GaAsP strain-balanced quantum well superlattice forms InGaAs nanowires along the bunching steps on a vicinal substrate embedded in the GaAs/GaAsP matrix. When it is used as an absorber in a GaAs single-junction cell, it assists carrier escape from narrow-gap InGaAs and extends photoluminescence lifetime as compared with a planar superlattice. Such a wire structure can be superior to existing quantum wells as a band-gap adjuster of a middle cell for improved current matching and efficiency.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"86 1","pages":"519-520"},"PeriodicalIF":0.0000,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"InGaAs/GaAsP quantum wells and wires for high-efficiency photovoltaic applications\",\"authors\":\"M. Sugiyama, H. Cho, Toprasertpong Kasidit, H. Sodabanlu, Kentaroh Watanabe, Y. Nakano\",\"doi\":\"10.1109/NANO.2016.7751576\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Layer undulation of InGaAs/GaAs/GaAsP strain-balanced quantum well superlattice forms InGaAs nanowires along the bunching steps on a vicinal substrate embedded in the GaAs/GaAsP matrix. When it is used as an absorber in a GaAs single-junction cell, it assists carrier escape from narrow-gap InGaAs and extends photoluminescence lifetime as compared with a planar superlattice. Such a wire structure can be superior to existing quantum wells as a band-gap adjuster of a middle cell for improved current matching and efficiency.\",\"PeriodicalId\":6646,\"journal\":{\"name\":\"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)\",\"volume\":\"86 1\",\"pages\":\"519-520\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NANO.2016.7751576\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO.2016.7751576","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
InGaAs/GaAsP quantum wells and wires for high-efficiency photovoltaic applications
Layer undulation of InGaAs/GaAs/GaAsP strain-balanced quantum well superlattice forms InGaAs nanowires along the bunching steps on a vicinal substrate embedded in the GaAs/GaAsP matrix. When it is used as an absorber in a GaAs single-junction cell, it assists carrier escape from narrow-gap InGaAs and extends photoluminescence lifetime as compared with a planar superlattice. Such a wire structure can be superior to existing quantum wells as a band-gap adjuster of a middle cell for improved current matching and efficiency.
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