1/4英寸800万像素背照堆叠CMOS图像传感器

2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers Pub Date : 2013-03-28 DOI:10.1109/ISSCC.2013.6487825

S. Sukegawa, T. Umebayashi, T. Nakajima, Hiroshi Kawanobe, K. Koseki, I. Hirota, T. Haruta, Masanori Kasai, Koji Fukumoto, T. Wakano, Keishi Inoue, Hiroshi Takahashi, T. Nagano, Y. Nitta, T. Hirayama, Noriyuki Fukushima

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引用次数: 146

摘要

近年来，由于智能手机市场的强劲增长，手机相机已经要求更多的多样化和增加的功能。除了传统图像传感器所要求的图像质量、速度和像素数外，对能够响应各种拍照场景的新功能的需求也很高。我们开发了一种堆叠式CMOS图像传感器(CIS)，该传感器由传统的背照(BI)图像传感器技术和65nm标准逻辑技术组成。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 1/4-inch 8Mpixel back-illuminated stacked CMOS image sensor

In recent years, cellphone cameras have come to require much more diversification and increased functionalities, due to the strong growth of the smartphone market. In addition to the image quality, speed, and pixel counts that conventional image sensors require, there is high demand for new functions that can respond to various photo-taking scenes. We developed a stacked CMOS image sensor (CIS), composed of conventional back-illuminated (BI) image-sensor technology and 65nm standard logic technology.

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2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers

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