纳米线机电逻辑开关

Qiliang Li, C. Richter, H. Xiong, J. Suehle
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引用次数: 1

摘要

我们提出了由悬浮在金属电极上的化学气相沉积生长的硅纳米线组成的纳米线机电开关的集成和表征。该装置通过施加电压,使纳米线的悬浮部分弯曲并接触金属电极。与目前的Si CMOS相比,可逆开关、高开/关电流比、小亚阈值斜率和低开关能量使开关在逻辑器件应用中非常有吸引力。此外,我们还开发了一个物理模型来模拟开关特性并提取材料特性。
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Nanowire electromechanical logic switch
We present the integration and characterization of nanowire electromechanical switches consisting of chemical-vapor-deposition grown silicon nanowires suspended over metal electrodes. The devices operate with the suspended part of the nanowire bent to touch metal electrode via electromechanical force by applying voltage. The reversible switching, high on/off current ratio, small subthreshold slope and low switching energy compared to current Si CMOS make the switches very attractive for logic device application. In addition, we have developed a physical model to simulate the switching characteristics and extract the material properties.
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