F. Zamkotsian, F. Poingt, L. Le Gouezigou, F. Gaborit, J. Provost, C. Artigue, J. Benoit
{"title":"GSMBE对[110]InP的1.55 μ m激光","authors":"F. Zamkotsian, F. Poingt, L. Le Gouezigou, F. Gaborit, J. Provost, C. Artigue, J. Benoit","doi":"10.1109/ICIPRM.1991.147444","DOIUrl":null,"url":null,"abstract":"The realization of standard heterojunction and multiple quantum well (MQW) 1.55- mu m lasers in the GaInAsP system grown by gas source molecular beam epitaxy (GSMBE) on [110] InP is discussed. It is shown that high-performance transmitters suitable for the polarization scrambling scheme can be achieved by integrating, on the same substrate, lasers and efficient polarization modulators.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"1.55 mu m laser on [110] InP by GSMBE\",\"authors\":\"F. Zamkotsian, F. Poingt, L. Le Gouezigou, F. Gaborit, J. Provost, C. Artigue, J. Benoit\",\"doi\":\"10.1109/ICIPRM.1991.147444\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The realization of standard heterojunction and multiple quantum well (MQW) 1.55- mu m lasers in the GaInAsP system grown by gas source molecular beam epitaxy (GSMBE) on [110] InP is discussed. It is shown that high-performance transmitters suitable for the polarization scrambling scheme can be achieved by integrating, on the same substrate, lasers and efficient polarization modulators.<<ETX>>\",\"PeriodicalId\":6444,\"journal\":{\"name\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1991.147444\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147444","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The realization of standard heterojunction and multiple quantum well (MQW) 1.55- mu m lasers in the GaInAsP system grown by gas source molecular beam epitaxy (GSMBE) on [110] InP is discussed. It is shown that high-performance transmitters suitable for the polarization scrambling scheme can be achieved by integrating, on the same substrate, lasers and efficient polarization modulators.<>
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