铁电薄膜电容器的简单统一分析模型及其在非易失性存储器中的应用

D. Chen, M. Azuma, L. Mcmillan, C. A. Paz de Araújo
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引用次数: 8

摘要

基于有效场假设和统计物理,建立了一个简单的统一分析铁电模型,该模型涵盖了铁电滞后、开关、相变(包括一阶和二阶相变)以及居里-魏斯定律。可以使用商业定制优化工具(如SmartSpice的Optimizer)从测量数据中提取模型参数。该模型可用于铁电非易失性存储器设计和制造的建模、仿真和统计过程控制。
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A simple unified analytical model for ferroelectric thin film capacitor and its applications for nonvolatile memory operation
A simple unified analytical ferroelectric model has been developed based on an effective field assumption and statistical physics, which covers ferroelectric hysteresis, switching, and phase transitions including first and second order phase transitions as well as Curie-Weiss law. The model parameters may be extracted from measured data using commercial customizable optimization tools such as SmartSpice's Optimizer. The model can be used for modeling, simulation and statistical process control for ferroelectric nonvolatile memory design and fabrication.
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