后金属化结构硅太阳电池的实验研究与理论建模

A. Sachenko, V. Kostylyov, R. Korkishko, V. Vlasiuk, I. Sokolovskyi, M. Evstigneev, O. Olikh, A. Shkrebtii, B. F. Dvernikov, V. V. Chernenko
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引用次数: 1

摘要

晶体硅(c-Si)仍然是太阳能电池工业中主要的光伏材料。目前,科学技术的进步使c-Si太阳能电池(SCs)的生产效率接近基本极限。因此,将实验结果与建模结果相结合,对于进一步提高光伏系统的效率和降低成本至关重要。我们对高效c-Si SCs进行了实验表征,并与建模结果进行了比较。为此,我们开发了改进的理论模型,并将其应用于研究样品中,以优化高效纹理太阳能电池的特性。该模型考虑了所有的复合机制,包括俄歇机制通过深层复合中心的非辐射激子复合和空间电荷区的复合。为了将理论结果与实验结果进行比较,我们提出了描述其在长波吸收边缘附近的实验光谱依赖性的外量子效率(EQE)经验公式。所提出的方法允许建模的短路电流和光转换效率在纹理晶体硅太阳能电池。已经确定,短路电流对开路电压的依赖关系和暗电流对施加电压V < 0.6 V的依赖关系是一致的。与实验结果相比,理论结果使我们能够验证所开发的形式,并用于优化SCs的关键参数,如基底厚度,掺杂水平等。在这项工作中,我们进一步推广和完善了我们之前提出和使用的分析方法,以分析高效太阳能电池并模拟其特性。
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Experimental investigation and theoretical modeling of textured silicon solar cells with rear metallization
Crystalline Silicon (c-Si) remains a dominant photovoltaic material in solar cell industry. Currently, scientific and technological advances enable producing the c-Si solar cells (SCs) efficiency close to the fundamental limit. Therefore, combining the experimental results and those of modeling becomes crucial to further progress in improving the efficiency and reducing the cost of photovoltaic systems. We carried out the experimental characterization of the highly-efficient c-Si SCs and compared with the results of modeling. For this purpose, we developed and applied to the samples under investigation the improved theoretical model to optimize characteristics of highly efficient textured solar cells. The model accounts for all recombination mechanisms, including nonradiative exciton recombination by the Auger mechanism via a deep recombination centers and recombination in the space-charge region. To compare the theoretical results with those of experiments, we proposed empirical formula for the external quantum efficiency (EQE), which describes its experimental spectral dependence near the long-wave absorption edge. The proposed approach allows modeling of the short-circuit current and photoconversion efficiency in the textured crystalline silicon solar cells. It has been ascertained that the dependences of the short-circuit current on the open-circuit voltage and the dark current on the applied voltage at V < 0.6 V coincide with each other. The theoretical results, as compared to the experimental ones, allowed us to validate the developed formalism, and were used to optimize the key parameters of SCs, such as the base thickness, doping level and others. In this work, we have further generalized and refined the analytical approach proposed and used by us earlier to analyze high-efficiency solar cells and model their characteristics.
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