D. Denninghoff, J. Lu, M. Laurent, E. Ahmadi, S. Keller, U. Mishra
{"title":"N-polar GaN/InAlN MIS-HEMT with 400-GHz ƒmax","authors":"D. Denninghoff, J. Lu, M. Laurent, E. Ahmadi, S. Keller, U. Mishra","doi":"10.1109/DRC.2012.6256939","DOIUrl":null,"url":null,"abstract":"This paper reports 400-GHz fmax using a tall-stem T-gate on an N-polar GaN/InAIN MIS-HEMT grown by MOCVD. This is the highest reported fmax value to date for an N-polar GaN HEMT and is among the highest values for all GaN HEMTs. GaN-based HEMTs.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"65 1","pages":"151-152"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"35","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"70th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2012.6256939","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper reports 400-GHz fmax using a tall-stem T-gate on an N-polar GaN/InAIN MIS-HEMT grown by MOCVD. This is the highest reported fmax value to date for an N-polar GaN HEMT and is among the highest values for all GaN HEMTs. GaN-based HEMTs.
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