TCAD Modeling for next generation CMOS devices

The complexity of the physics involved in the fabrication of 3D advanced nano-devices, promotes the daily use of advanced simulation tools. TCAD will be needed not only to optimize the transistors and support the device and process integration teams, but also to understand the new materials impact on the transistor performance. To achieve such goal, new simulation paradigms are required, affecting the way TCAD is used. Actually, the 3D TCAD, already used for silicon nodes, faces a limitation of present continuum tools for process and device simulations. The constant reduction of the transistor dimensions and the point defects-dopants interaction with multiple interfaces make Kinetic Monte Carlo a suitable tool for predictive 3D process modeling. On the device side, the 3D confinement of the device and the discrete doping profiles require accurate modeling of the scattering mechanisms in the silicon channel which makes 3D Monte Carlo simulation attractive However, for the simulation of new materials in the channel and source/drain of the Finfet, 3D Monte Carlo simulation becomes mandatory for the transport modeling. In this paper, we will review these different aspects of the TCAD needed for the 3D Tri-gate devices.