{"title":"接口工程高tc Josephson结","authors":"B.H Moeckly , K Char , Y Huang , K.L Merkle","doi":"10.1016/S0964-1807(98)00070-2","DOIUrl":null,"url":null,"abstract":"<div><p>We have developed a process for fabricating YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7</sub> thin-film, ramp-type edge junctions in which no deposited barrier is employed. These devices display excellent RSJ-type current–voltage (<em>I</em>–<em>V</em>) characteristics with values of <em>I</em><sub>c</sub> and <em>R</em><sub>n</sub><span> tunable over a useful range for operation of digital circuits. Initial junction reproducibility and uniformity are very encouraging.</span></p></div>","PeriodicalId":100110,"journal":{"name":"Applied Superconductivity","volume":"6 7","pages":"Pages 317-323"},"PeriodicalIF":0.0000,"publicationDate":"1998-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S0964-1807(98)00070-2","citationCount":"3","resultStr":"{\"title\":\"Interface-Engineered High-Tc Josephson Junctions\",\"authors\":\"B.H Moeckly , K Char , Y Huang , K.L Merkle\",\"doi\":\"10.1016/S0964-1807(98)00070-2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>We have developed a process for fabricating YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7</sub> thin-film, ramp-type edge junctions in which no deposited barrier is employed. These devices display excellent RSJ-type current–voltage (<em>I</em>–<em>V</em>) characteristics with values of <em>I</em><sub>c</sub> and <em>R</em><sub>n</sub><span> tunable over a useful range for operation of digital circuits. Initial junction reproducibility and uniformity are very encouraging.</span></p></div>\",\"PeriodicalId\":100110,\"journal\":{\"name\":\"Applied Superconductivity\",\"volume\":\"6 7\",\"pages\":\"Pages 317-323\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/S0964-1807(98)00070-2\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Superconductivity\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0964180798000702\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Superconductivity","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0964180798000702","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We have developed a process for fabricating YBa2Cu3O7 thin-film, ramp-type edge junctions in which no deposited barrier is employed. These devices display excellent RSJ-type current–voltage (I–V) characteristics with values of Ic and Rn tunable over a useful range for operation of digital circuits. Initial junction reproducibility and uniformity are very encouraging.
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