基于12 VIN到1 VOUT点负载转换器的高频eGaN单片半桥集成电路

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI:10.1109/WIPDA.2015.7369282

D. Reusch

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引用次数: 7

摘要

功率变换器不断向更高的效率、更高的功率密度、更高的开关频率和更高的输出电流发展。快速成熟的氮化镓(GaN)技术可以满足这些需求，在本文中，高性能的12 VIN到1 VOUT eGaN单片半桥IC基于负载点(POL)降压转换器将被展示，输出电流高达40 A，开关频率高达4 MHz。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High frequency eGaN monolithic half bridge IC based 12 VIN to 1 VOUT point of load converter

Power converters are constantly trending towards higher efficiency, higher power density, higher switching frequency, and higher output current. Rapidly maturing gallium nitride (GaN) technology can meet these demands, and in this paper high performance 12 VIN to 1 VOUT eGaN monolithic half bridge IC based point-of-load (POL) buck converters will be demonstrated at output currents up to 40 A and switching frequencies up to 4 MHz.

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2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)

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