磁控溅射制备氧化钛和二氧化钛薄膜及其热力学模型

S. V. Bulyarskiy, D. Koiva, V. S. Belov, E. Zenova, G. Rudakov, G. Gusarov
{"title":"磁控溅射制备氧化钛和二氧化钛薄膜及其热力学模型","authors":"S. V. Bulyarskiy, D. Koiva, V. S. Belov, E. Zenova, G. Rudakov, G. Gusarov","doi":"10.1116/6.0001065","DOIUrl":null,"url":null,"abstract":"This work is devoted to the problem of the formation of titanium monoxide and dioxide by magnetron sputtering. Sputtering titanium in constant flows of oxygen and argon and constant magnetron power leads to the creation of equilibrium partial pressures of oxygen and titanium vapors. The conditions for the synthesis of nanocrystalline titanium monoxide at low temperatures were determined experimentally and substantiated by the thermodynamic method. An analysis is made by the method of minimizing the Gibbs free energy. We have obtained an expression for the ratio of the oxygen flow and the gas discharge power, the analysis of which makes it possible to determine the conditions for the formation of titanium oxide with a certain stoichiometric composition. The developed method for the analysis of equilibrium in the deposition chamber can be used to identify the conditions for the synthesis of other compounds that are important for practice, including oxides and chalcogenides, and the horizons of their use in nanoelectronics are constantly growing at the present time.","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":"8 1","pages":"053403"},"PeriodicalIF":0.0000,"publicationDate":"2021-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Titanium monoxide and titanium dioxide thin film formation by magnetron sputtering and its thermodynamic model\",\"authors\":\"S. V. Bulyarskiy, D. Koiva, V. S. Belov, E. Zenova, G. Rudakov, G. Gusarov\",\"doi\":\"10.1116/6.0001065\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work is devoted to the problem of the formation of titanium monoxide and dioxide by magnetron sputtering. Sputtering titanium in constant flows of oxygen and argon and constant magnetron power leads to the creation of equilibrium partial pressures of oxygen and titanium vapors. The conditions for the synthesis of nanocrystalline titanium monoxide at low temperatures were determined experimentally and substantiated by the thermodynamic method. An analysis is made by the method of minimizing the Gibbs free energy. We have obtained an expression for the ratio of the oxygen flow and the gas discharge power, the analysis of which makes it possible to determine the conditions for the formation of titanium oxide with a certain stoichiometric composition. The developed method for the analysis of equilibrium in the deposition chamber can be used to identify the conditions for the synthesis of other compounds that are important for practice, including oxides and chalcogenides, and the horizons of their use in nanoelectronics are constantly growing at the present time.\",\"PeriodicalId\":17571,\"journal\":{\"name\":\"Journal of Vacuum Science and Technology\",\"volume\":\"8 1\",\"pages\":\"053403\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-07-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Vacuum Science and Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1116/6.0001065\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Vacuum Science and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1116/6.0001065","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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摘要

这项工作致力于磁控溅射形成氧化钛和二氧化钛的问题。在恒定的氧气和氩气流和恒定的磁控管功率下溅射钛会导致氧气和钛蒸气的平衡分压的产生。实验确定了低温合成纳米氧化钛的条件,并用热力学方法对其进行了验证。用最小吉布斯自由能法对其进行了分析。得到了氧流量与气体放电功率之比的表达式,通过对其分析,可以确定具有一定化学计量成分的氧化钛的形成条件。所开发的沉积室平衡分析方法可用于确定其他对实践很重要的化合物的合成条件,包括氧化物和硫族化合物,它们在纳米电子学中的应用范围目前正在不断扩大。
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Titanium monoxide and titanium dioxide thin film formation by magnetron sputtering and its thermodynamic model
This work is devoted to the problem of the formation of titanium monoxide and dioxide by magnetron sputtering. Sputtering titanium in constant flows of oxygen and argon and constant magnetron power leads to the creation of equilibrium partial pressures of oxygen and titanium vapors. The conditions for the synthesis of nanocrystalline titanium monoxide at low temperatures were determined experimentally and substantiated by the thermodynamic method. An analysis is made by the method of minimizing the Gibbs free energy. We have obtained an expression for the ratio of the oxygen flow and the gas discharge power, the analysis of which makes it possible to determine the conditions for the formation of titanium oxide with a certain stoichiometric composition. The developed method for the analysis of equilibrium in the deposition chamber can be used to identify the conditions for the synthesis of other compounds that are important for practice, including oxides and chalcogenides, and the horizons of their use in nanoelectronics are constantly growing at the present time.
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