{"title":"第11部分概述:非易失性存储器解决方案","authors":"T. Kono, Ki-Tae Park, Leland Chang","doi":"10.1109/ISSCC.2017.7870327","DOIUrl":null,"url":null,"abstract":"Continued proliferation of semiconductors drives the evolution of nonvolatile memory technologies towards higher density, lower power consumption, and lower cost. This year, NAND Flash memories are demonstrated in 3D technologies with up to 64 stacked word-line layers. An embedded split-gate NOR Flash is also shown to dramatically reduce power consumption and meet the requirements of high-temperature sensing applications. Finally, logic anti-fuse one-time-programmable (OTP) memory is scaled down to the 10nm technology node.","PeriodicalId":6511,"journal":{"name":"2016 IEEE International Solid-State Circuits Conference (ISSCC)","volume":"20 1","pages":"194-195"},"PeriodicalIF":0.0000,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Session 11 overview: Nonvolatile memory solutions\",\"authors\":\"T. Kono, Ki-Tae Park, Leland Chang\",\"doi\":\"10.1109/ISSCC.2017.7870327\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Continued proliferation of semiconductors drives the evolution of nonvolatile memory technologies towards higher density, lower power consumption, and lower cost. This year, NAND Flash memories are demonstrated in 3D technologies with up to 64 stacked word-line layers. An embedded split-gate NOR Flash is also shown to dramatically reduce power consumption and meet the requirements of high-temperature sensing applications. Finally, logic anti-fuse one-time-programmable (OTP) memory is scaled down to the 10nm technology node.\",\"PeriodicalId\":6511,\"journal\":{\"name\":\"2016 IEEE International Solid-State Circuits Conference (ISSCC)\",\"volume\":\"20 1\",\"pages\":\"194-195\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Solid-State Circuits Conference (ISSCC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.2017.7870327\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Solid-State Circuits Conference (ISSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2017.7870327","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Continued proliferation of semiconductors drives the evolution of nonvolatile memory technologies towards higher density, lower power consumption, and lower cost. This year, NAND Flash memories are demonstrated in 3D technologies with up to 64 stacked word-line layers. An embedded split-gate NOR Flash is also shown to dramatically reduce power consumption and meet the requirements of high-temperature sensing applications. Finally, logic anti-fuse one-time-programmable (OTP) memory is scaled down to the 10nm technology node.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
