基于记忆电阻器的超高密度神经交叉杆片上监督学习规则

Djaafar Chabi, Zhaohao Wang, Weisheng Zhao, Jacques-Olivier Klein
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引用次数: 19

摘要

基于忆阻器的神经学习网络具有低功耗、高密度和耐缺陷等优点,被认为是未来计算系统的候选对象之一。然而,由于神经元结构庞大、学习细胞复杂等限制,其应用仍受到阻碍。本文提出了一种基于记忆电阻的神经交叉电路来实现片上监督学习规则。在我们的工作中,神经元的激活函数是用简单的CMOS逆变器实现的,以节省面积开销。重要的是,我们提出了一个紧凑的学习单元,具有由两个反平行定向二进制记忆电阻器组成的交叉闩锁。该方案实现了高密度集成,提高了学习电路的可靠性。首先描述了监督学习规则的电路结构、忆阻器模型和操作过程。随后,我们利用CMOS 40nm设计套件进行了瞬态仿真,验证了所提出的学习电路的功能。分析和评估表明,我们的电路在片上学习方面具有很大的潜力。
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On-chip supervised learning rule for ultra high density neural crossbar using memristor for synapse and neuron
The memristor-based neural learning network is considered as one of the candidates for future computing systems thanks to its low power, high density and defect-tolerance. However, its application is still hindered by the limitations of huge neuron structure and complicated learning cell. In this paper, we present a memristor-based neural crossbar circuit to implement on-chip supervised learning rule. In our work, activation function of neuron is implemented with simple CMOS inverter to save area overhead. Importantly, we propose a compact learning cell with a crossbar latch consisting of two antiparallel oriented binary memristors. This scheme allows high density integration and could improve the reliability of learning circuit. We describe firstly the circuit architecture, memristor model and operation process of supervised learning rule. Afterwards we perform transient simulation with CMOS 40nm design kit to validate the function of proposed learning circuit. Analysis and evaluation demonstrate that our circuit show great potential in on-chip learning.
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