晶圆片的精密被动机械对准

A. Slocum, Alexis C. Weber
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引用次数: 72

摘要

研制、制造并测试了一种具有微米级和更高对准精度的被动机械晶圆对准技术。这种技术是基于弹性平均原理:它使用匹配的金字塔(凸)和凹槽(凹)元素,这些元素之前已经在晶圆上形成图案,在晶圆堆叠时被动地对齐彼此。采用湿各向异性(KOH)蚀刻和深度反应离子蚀刻技术在4-in(100)硅片上微加工凹面和凸面元件。测试结果表明,该方法具有亚微米级的重复性和一微米级的精度。重复性和准确性也被测量为参与元素数量的函数。只需8个配合元件即可实现亚微米级的重复性。该技术的潜在应用是用于多晶圆MEMS器件和三维互连集成电路(ic)键合的精密对准,以及用于多晶圆堆叠同时键合的一步对准。未来的工作将集中于最小化元素的大小。
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Precision passive mechanical alignment of wafers
A passive mechanical wafer alignment technique, capable of micron and better alignment accuracy, was developed, fabricated and tested. This technique is based on the principle of elastic averaging: It uses mating pyramid (convex) and groove (concave) elements, which have been previously patterned on the wafers, to passively align wafers to each other as they are stacked. The concave and convex elements were micro machined on 4-in (100) silicon wafers using wet anisotropic (KOH) etching and deep reactive ion etching. Submicron repeatability and accuracy on the order of one micron were shown through testing. Repeatability and accuracy were also measured as a function of the number of engaged elements. Submicrometer repeatability was achieved with as little as eight mating elements. Potential applications of this technique are precision alignment for bonding of multiwafer MEMS devices and three-dimensional (3-D) interconnect integrated circuits (ICs), as well as one-step alignment for simultaneous bonding of multiple wafer stacks. Future work will focus on minimizing the size of the elements.
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