Pub Date : 2003-12-01DOI: 10.1109/JMEMS.2003.820269
R. Syms, A. Lohmann
A miniature grating-tunable external cavity laser diode constructed using microoptoelectromechanical systems (MOEMS) technology is described. The tuning element is a vertically etched blazed grating mounted on a compound flexure, which consists of a cantilever in series with a portal frame. The flexure is deflected using comb electrostatic drives to rotate and translate the grating. The tuning element is prototyped using deep reactive ion etching of bonded silicon-on-insulator (SOI) material. Interferometric measurements of electromechanical performance are presented, and departures from the ideal behavior are identified. Electrostatic tuning of a Littrow external cavity laser over a range of 20 nm using a 50-V drive is demonstrated.
{"title":"MOEMS tuning element for a Littrow external cavity laser","authors":"R. Syms, A. Lohmann","doi":"10.1109/JMEMS.2003.820269","DOIUrl":"https://doi.org/10.1109/JMEMS.2003.820269","url":null,"abstract":"A miniature grating-tunable external cavity laser diode constructed using microoptoelectromechanical systems (MOEMS) technology is described. The tuning element is a vertically etched blazed grating mounted on a compound flexure, which consists of a cantilever in series with a portal frame. The flexure is deflected using comb electrostatic drives to rotate and translate the grating. The tuning element is prototyped using deep reactive ion etching of bonded silicon-on-insulator (SOI) material. Interferometric measurements of electromechanical performance are presented, and departures from the ideal behavior are identified. Electrostatic tuning of a Littrow external cavity laser over a range of 20 nm using a 50-V drive is demonstrated.","PeriodicalId":13438,"journal":{"name":"IEEE\\/ASME Journal of Microelectromechanical Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2003-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73255175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-01DOI: 10.1109/JMEMS.2003.820282
L. Cheng, A. Steckl, J. Scofield
We have investigated the effect of trimethylsilane ([(CH/sub 3/)/sub 3/SiH] or 3MS) flow rate on the growth of SiC thin-film on single-crystal sapphire substrate for fiber-optic temperature sensor. The SiC film thickness was in the range of 2-3 /spl mu/m. The variation of the 3MS flow rate affected the structural properties of the SiC films. This, in turn, changed the optical properties and temperature sensing performance of the sensors. Optical reflection from the SiC thin-film Fabry-Pe/spl acute/rot interferometers showed one-way phase shifts in resonant minima on all measured samples. Linear fits to the resonant minima (at 660 to 710 nm) versus temperature provide the corresponding thermal expansion coefficient, /spl kappa//sub /spl phi//, of 1.7-1.9/spl times/10/sup -5///spl deg/C. With the optimized 3MS flow rate, the SiC temperature sensor exhibits a temperature accuracy of /spl plusmn/2.8/spl deg/C from 22 to 540/spl deg/C. The short-term SiC sensor stability at 532/spl deg/C for two weeks shows a very small standard deviation of 0.97/spl deg/C.
{"title":"Effect of trimethylsilane flow rate on the growth of SiC thin-films for fiber-optic temperature sensors","authors":"L. Cheng, A. Steckl, J. Scofield","doi":"10.1109/JMEMS.2003.820282","DOIUrl":"https://doi.org/10.1109/JMEMS.2003.820282","url":null,"abstract":"We have investigated the effect of trimethylsilane ([(CH/sub 3/)/sub 3/SiH] or 3MS) flow rate on the growth of SiC thin-film on single-crystal sapphire substrate for fiber-optic temperature sensor. The SiC film thickness was in the range of 2-3 /spl mu/m. The variation of the 3MS flow rate affected the structural properties of the SiC films. This, in turn, changed the optical properties and temperature sensing performance of the sensors. Optical reflection from the SiC thin-film Fabry-Pe/spl acute/rot interferometers showed one-way phase shifts in resonant minima on all measured samples. Linear fits to the resonant minima (at 660 to 710 nm) versus temperature provide the corresponding thermal expansion coefficient, /spl kappa//sub /spl phi//, of 1.7-1.9/spl times/10/sup -5///spl deg/C. With the optimized 3MS flow rate, the SiC temperature sensor exhibits a temperature accuracy of /spl plusmn/2.8/spl deg/C from 22 to 540/spl deg/C. The short-term SiC sensor stability at 532/spl deg/C for two weeks shows a very small standard deviation of 0.97/spl deg/C.","PeriodicalId":13438,"journal":{"name":"IEEE\\/ASME Journal of Microelectromechanical Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2003-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80327284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-01DOI: 10.1109/JMEMS.2003.820265
Zhixiong Xiao, W. Peng, K. Farmer
In this paper, we study the pull-in effect for rectangular electrostatic torsion actuators by using analytical calculations that include the higher order effects of nonlinear spring bending. The calculation approach speeds the design of such systems. The method is found to be suitable for actuators with single long beam springs where the ratio of the resonant frequencies for the torsion and bending modes is up to at least 3.5, in the region where bending dominates torsion. After fitting the theory in this paper to Coventor simulation results with three nonphysical coefficients, the fractional differences between Coventor simulation and analytical calculation results are smaller than 6%. The method is also suitable for at least one class of folded spring designs, with greatly decreased bending mode displacement. The main results are also verified by comparing them with published experimental results.
{"title":"Analytical behavior of rectangular electrostatic torsion actuators with nonlinear spring bending","authors":"Zhixiong Xiao, W. Peng, K. Farmer","doi":"10.1109/JMEMS.2003.820265","DOIUrl":"https://doi.org/10.1109/JMEMS.2003.820265","url":null,"abstract":"In this paper, we study the pull-in effect for rectangular electrostatic torsion actuators by using analytical calculations that include the higher order effects of nonlinear spring bending. The calculation approach speeds the design of such systems. The method is found to be suitable for actuators with single long beam springs where the ratio of the resonant frequencies for the torsion and bending modes is up to at least 3.5, in the region where bending dominates torsion. After fitting the theory in this paper to Coventor simulation results with three nonphysical coefficients, the fractional differences between Coventor simulation and analytical calculation results are smaller than 6%. The method is also suitable for at least one class of folded spring designs, with greatly decreased bending mode displacement. The main results are also verified by comparing them with published experimental results.","PeriodicalId":13438,"journal":{"name":"IEEE\\/ASME Journal of Microelectromechanical Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2003-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82421016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-01DOI: 10.1109/JMEMS.2003.820267
A. A. Darhuber, J.P. Valentino, S. Troian, S. Wagner
We have designed a microfluidic device for the actuation of liquid droplets or continuous streams on a solid surface by means of integrated microheater arrays. The microheaters provide control of the surface temperature distribution with high spatial resolution. These temperature gradients locally alter the surface tension along droplets and thin films thus propelling the liquid toward the colder regions. In combination with liquophilic and liquophobic chemical surface patterning, this device can be used as a logistic platform for the parallel and automated routing, mixing and reacting of a multitude of liquid samples, including alkanes, poly(ethylene glycol) and water.
{"title":"Thermocapillary actuation of droplets on chemically patterned surfaces by programmable microheater arrays","authors":"A. A. Darhuber, J.P. Valentino, S. Troian, S. Wagner","doi":"10.1109/JMEMS.2003.820267","DOIUrl":"https://doi.org/10.1109/JMEMS.2003.820267","url":null,"abstract":"We have designed a microfluidic device for the actuation of liquid droplets or continuous streams on a solid surface by means of integrated microheater arrays. The microheaters provide control of the surface temperature distribution with high spatial resolution. These temperature gradients locally alter the surface tension along droplets and thin films thus propelling the liquid toward the colder regions. In combination with liquophilic and liquophobic chemical surface patterning, this device can be used as a logistic platform for the parallel and automated routing, mixing and reacting of a multitude of liquid samples, including alkanes, poly(ethylene glycol) and water.","PeriodicalId":13438,"journal":{"name":"IEEE\\/ASME Journal of Microelectromechanical Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2003-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86863995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-01DOI: 10.1109/JMEMS.2003.820288
Meng-Nian Niu, E. S. Kim
This paper describes a novel bimorph piezoelectric microphone built on a micromachined parylene diaphragm with two ZnO films of opposite c-axis orientations. Both the sensitivity and signal-to-noise ratio (SNR) of the bimorph parylene-diaphragm microphone have been demonstrated to be much higher than those of a conventional unimorph silicon-nitride-diaphragm microphone.
{"title":"Piezoelectric bimorph microphone built on micromachined parylene diaphragm","authors":"Meng-Nian Niu, E. S. Kim","doi":"10.1109/JMEMS.2003.820288","DOIUrl":"https://doi.org/10.1109/JMEMS.2003.820288","url":null,"abstract":"This paper describes a novel bimorph piezoelectric microphone built on a micromachined parylene diaphragm with two ZnO films of opposite c-axis orientations. Both the sensitivity and signal-to-noise ratio (SNR) of the bimorph parylene-diaphragm microphone have been demonstrated to be much higher than those of a conventional unimorph silicon-nitride-diaphragm microphone.","PeriodicalId":13438,"journal":{"name":"IEEE\\/ASME Journal of Microelectromechanical Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2003-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84806542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-01DOI: 10.1109/JMEMS.2003.818454
E. Yang, D. Wiberg
This paper describes a new fabrication technique developed for the construction of large area mirror membranes via the transfer of wafer-scale continuous membranes from one substrate to another. Using this technique, wafer-scale silicon mirror membranes have been successfully transferred without the use of sacrificial layers such as adhesives or polymers. This transfer technique has also been applied to the fabrication and transfer of 1 /spl mu/m thick corrugated membrane actuators. These membrane actuators consist of several concentric-ring-type corrugations constructed within a polysilicon membrane. A typical polysilicon actuator membrane with an electrode gap of 1.5 /spl mu/m, fabricated using the wafer-scale transfer technique, shows a vertical deflection of 0.4 /spl mu/m at 55 V. The mirror membranes are constructed from single-crystal silicon, 10 cm in diameter, and have been successfully transferred in their entirety. Using a white-light interferometer, the measured average peak-to-valley surface figure error for the transferred single-crystal silicon mirror membranes is approximately 9 nm as measured over a 1 mm/sup 2/ membrane area. The wafer-scale membrane transfer technique demonstrated in this paper has the following benefits over previously reported transfer techniques: 1) No postassembly release process to remove sacrificial polymers is required. 2) The bonded interface is completely isolated from any acid, etchant, or solvent during the transfer process, ensuring a clean and uniform membrane surface. 3) Our technique is capable of transferring large, continuous membranes onto substrates.
{"title":"A wafer-scale membrane transfer Process for the fabrication of optical quality, large continuous membranes","authors":"E. Yang, D. Wiberg","doi":"10.1109/JMEMS.2003.818454","DOIUrl":"https://doi.org/10.1109/JMEMS.2003.818454","url":null,"abstract":"This paper describes a new fabrication technique developed for the construction of large area mirror membranes via the transfer of wafer-scale continuous membranes from one substrate to another. Using this technique, wafer-scale silicon mirror membranes have been successfully transferred without the use of sacrificial layers such as adhesives or polymers. This transfer technique has also been applied to the fabrication and transfer of 1 /spl mu/m thick corrugated membrane actuators. These membrane actuators consist of several concentric-ring-type corrugations constructed within a polysilicon membrane. A typical polysilicon actuator membrane with an electrode gap of 1.5 /spl mu/m, fabricated using the wafer-scale transfer technique, shows a vertical deflection of 0.4 /spl mu/m at 55 V. The mirror membranes are constructed from single-crystal silicon, 10 cm in diameter, and have been successfully transferred in their entirety. Using a white-light interferometer, the measured average peak-to-valley surface figure error for the transferred single-crystal silicon mirror membranes is approximately 9 nm as measured over a 1 mm/sup 2/ membrane area. The wafer-scale membrane transfer technique demonstrated in this paper has the following benefits over previously reported transfer techniques: 1) No postassembly release process to remove sacrificial polymers is required. 2) The bonded interface is completely isolated from any acid, etchant, or solvent during the transfer process, ensuring a clean and uniform membrane surface. 3) Our technique is capable of transferring large, continuous membranes onto substrates.","PeriodicalId":13438,"journal":{"name":"IEEE\\/ASME Journal of Microelectromechanical Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2003-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85354611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-01DOI: 10.1109/JMEMS.2003.820290
R. Nadal-Guardia, A. M. Brosa, A. Dehé
Parallel plate electrostatic transducers can be described with the one-dimensional (1-D) lumped model. The one-dimensional approximation based on the elastic, the damping and the inertial force is extended with the electrostatic force (due to the electrical biasing) to model the behavior of electrostatic actuators. In case of sensors, the effect of the external excitation has to be also included. The final equation describing the dynamic behavior of the sensor can only be solved numerically avoiding a compact solution. In this paper the perturbation method applied to solve the equations describing parallel plate capacitive sensors is presented. A compact expression is obtained and applied to model silicon microphones. For the sake of comparison, the silicon microphone is also modeled with the well-known analog equivalent electric circuit, which is extended to take into account the resistor used to bias the microphone. It is shown in which conditions both modeling techniques give equivalent results. However, in front of the traditional equivalent electric circuit, the model based on mass, spring constant and damping coefficient allows taking into account the pull-in instability. Assessment of the modeling method is carried out by experimental measurements on a silicon microphone and previous experimental results reported in the literature. A very good agreement between theory and measurements is obtained.
{"title":"AC transfer function of electrostatic capacitive sensors based on the 1-D equivalent model: application to silicon microphones","authors":"R. Nadal-Guardia, A. M. Brosa, A. Dehé","doi":"10.1109/JMEMS.2003.820290","DOIUrl":"https://doi.org/10.1109/JMEMS.2003.820290","url":null,"abstract":"Parallel plate electrostatic transducers can be described with the one-dimensional (1-D) lumped model. The one-dimensional approximation based on the elastic, the damping and the inertial force is extended with the electrostatic force (due to the electrical biasing) to model the behavior of electrostatic actuators. In case of sensors, the effect of the external excitation has to be also included. The final equation describing the dynamic behavior of the sensor can only be solved numerically avoiding a compact solution. In this paper the perturbation method applied to solve the equations describing parallel plate capacitive sensors is presented. A compact expression is obtained and applied to model silicon microphones. For the sake of comparison, the silicon microphone is also modeled with the well-known analog equivalent electric circuit, which is extended to take into account the resistor used to bias the microphone. It is shown in which conditions both modeling techniques give equivalent results. However, in front of the traditional equivalent electric circuit, the model based on mass, spring constant and damping coefficient allows taking into account the pull-in instability. Assessment of the modeling method is carried out by experimental measurements on a silicon microphone and previous experimental results reported in the literature. A very good agreement between theory and measurements is obtained.","PeriodicalId":13438,"journal":{"name":"IEEE\\/ASME Journal of Microelectromechanical Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2003-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89713160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-01DOI: 10.1109/JMEMS.2003.820289
A. Slocum, Alexis C. Weber
A passive mechanical wafer alignment technique, capable of micron and better alignment accuracy, was developed, fabricated and tested. This technique is based on the principle of elastic averaging: It uses mating pyramid (convex) and groove (concave) elements, which have been previously patterned on the wafers, to passively align wafers to each other as they are stacked. The concave and convex elements were micro machined on 4-in (100) silicon wafers using wet anisotropic (KOH) etching and deep reactive ion etching. Submicron repeatability and accuracy on the order of one micron were shown through testing. Repeatability and accuracy were also measured as a function of the number of engaged elements. Submicrometer repeatability was achieved with as little as eight mating elements. Potential applications of this technique are precision alignment for bonding of multiwafer MEMS devices and three-dimensional (3-D) interconnect integrated circuits (ICs), as well as one-step alignment for simultaneous bonding of multiple wafer stacks. Future work will focus on minimizing the size of the elements.
{"title":"Precision passive mechanical alignment of wafers","authors":"A. Slocum, Alexis C. Weber","doi":"10.1109/JMEMS.2003.820289","DOIUrl":"https://doi.org/10.1109/JMEMS.2003.820289","url":null,"abstract":"A passive mechanical wafer alignment technique, capable of micron and better alignment accuracy, was developed, fabricated and tested. This technique is based on the principle of elastic averaging: It uses mating pyramid (convex) and groove (concave) elements, which have been previously patterned on the wafers, to passively align wafers to each other as they are stacked. The concave and convex elements were micro machined on 4-in (100) silicon wafers using wet anisotropic (KOH) etching and deep reactive ion etching. Submicron repeatability and accuracy on the order of one micron were shown through testing. Repeatability and accuracy were also measured as a function of the number of engaged elements. Submicrometer repeatability was achieved with as little as eight mating elements. Potential applications of this technique are precision alignment for bonding of multiwafer MEMS devices and three-dimensional (3-D) interconnect integrated circuits (ICs), as well as one-step alignment for simultaneous bonding of multiple wafer stacks. Future work will focus on minimizing the size of the elements.","PeriodicalId":13438,"journal":{"name":"IEEE\\/ASME Journal of Microelectromechanical Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2003-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86847897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-01DOI: 10.1109/JMEMS.2003.820270
G. Kaltsas, D. N. Pagonis, A. Nassiopoulou
This work presents a new method for the fabrication of buried microchannels, covered with porous silicon (PS). The specific method is a two-step electrochemical process, which combines PS formation and electropolishing. In a first step a PS layer with a specific depth is created at a predefined area and in the following step a cavity underneath is formed, by electropolishing of silicon. The shape of the microchannel is semi-cylindrical due to isotropic formation. The method allows accurate control of the dimensions of both PS and the cavity. The formation conditions of the PS layer and the cavity were optimized so as to obtain smooth microchannel walls. In order to obtain stable structures the area underneath the PS masking layer was transformed into n-type by implantation, taking advantage of the selectivity of PS formation between n- and p-type silicon. With this technique, a monocrystalline support for the PS layer is formed on top of the cavity. Various microchannel diameters with different thickness of capping PS layer were obtained. The process is CMOS compatible and it uses only one lithographic step and leaves the surface of the wafer unaffected for further processing. A microfluidic thermal flow sensor was fabricated using this technology, the experimental evaluation of which is in progress.
{"title":"Planar CMOS compatible process for the fabrication of buried microchannels in silicon, using porous-silicon technology","authors":"G. Kaltsas, D. N. Pagonis, A. Nassiopoulou","doi":"10.1109/JMEMS.2003.820270","DOIUrl":"https://doi.org/10.1109/JMEMS.2003.820270","url":null,"abstract":"This work presents a new method for the fabrication of buried microchannels, covered with porous silicon (PS). The specific method is a two-step electrochemical process, which combines PS formation and electropolishing. In a first step a PS layer with a specific depth is created at a predefined area and in the following step a cavity underneath is formed, by electropolishing of silicon. The shape of the microchannel is semi-cylindrical due to isotropic formation. The method allows accurate control of the dimensions of both PS and the cavity. The formation conditions of the PS layer and the cavity were optimized so as to obtain smooth microchannel walls. In order to obtain stable structures the area underneath the PS masking layer was transformed into n-type by implantation, taking advantage of the selectivity of PS formation between n- and p-type silicon. With this technique, a monocrystalline support for the PS layer is formed on top of the cavity. Various microchannel diameters with different thickness of capping PS layer were obtained. The process is CMOS compatible and it uses only one lithographic step and leaves the surface of the wafer unaffected for further processing. A microfluidic thermal flow sensor was fabricated using this technology, the experimental evaluation of which is in progress.","PeriodicalId":13438,"journal":{"name":"IEEE\\/ASME Journal of Microelectromechanical Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2003-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86962802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-01DOI: 10.1109/JMEMS.2003.820936
K. R. Williams, Kishan Gupta, M. Wasilik
Samples of 53 materials that are used or potentially can be used or in the fabrication of microelectromechanical systems and integrated circuits were prepared: single-crystal silicon with two doping levels, polycrystalline silicon with two doping levels, polycrystalline germanium, polycrystalline SiGe, graphite, fused quartz, Pyrex 7740, nine other preparations of silicon dioxide, four preparations of silicon nitride, sapphire, two preparations of aluminum oxide, aluminum, Al/2%Si, titanium, vanadium, niobium, two preparations of tantalum, two preparations of chromium, Cr on Au, molybdenum, tungsten, nickel, palladium, platinum, copper, silver, gold, 10 Ti/90 W, 80 Ni/20 Cr, TiN, four types of photoresist, resist pen, Parylene-C, and spin-on polyimide. Selected samples were etched in 35 different etches: isotropic silicon etchant, potassium hydroxide, 10:1 HF, 5:1 BHF, Pad Etch 4, hot phosphoric acid, Aluminum Etchant Type A, titanium wet etchant, CR-7 chromium etchant, CR-14 chromium etchant, molybdenum etchant, warm hydrogen peroxide, Copper Etchant Type CE-200, Copper Etchant APS 100, dilute aqua regia, AU-5 gold etchant, Nichrome Etchant TFN, hot sulfuric+phosphoric acids, Piranha, Microstrip 2001, acetone, methanol, isopropanol, xenon difluoride, HF+H/sub 2/O vapor, oxygen plasma, two deep reactive ion etch recipes with two different types of wafer clamping, SF/sub 6/ plasma, SF/sub 6/+O/sub 2/ plasma, CF/sub 4/ plasma, CF/sub 4/+O/sub 2/ plasma, and argon ion milling. The etch rates of 620 combinations of these were measured. The etch rates of thermal oxide in different dilutions of HF and BHF are also reported. Sample preparation and information about the etches is given.
{"title":"Etch rates for micromachining processing-Part II","authors":"K. R. Williams, Kishan Gupta, M. Wasilik","doi":"10.1109/JMEMS.2003.820936","DOIUrl":"https://doi.org/10.1109/JMEMS.2003.820936","url":null,"abstract":"Samples of 53 materials that are used or potentially can be used or in the fabrication of microelectromechanical systems and integrated circuits were prepared: single-crystal silicon with two doping levels, polycrystalline silicon with two doping levels, polycrystalline germanium, polycrystalline SiGe, graphite, fused quartz, Pyrex 7740, nine other preparations of silicon dioxide, four preparations of silicon nitride, sapphire, two preparations of aluminum oxide, aluminum, Al/2%Si, titanium, vanadium, niobium, two preparations of tantalum, two preparations of chromium, Cr on Au, molybdenum, tungsten, nickel, palladium, platinum, copper, silver, gold, 10 Ti/90 W, 80 Ni/20 Cr, TiN, four types of photoresist, resist pen, Parylene-C, and spin-on polyimide. Selected samples were etched in 35 different etches: isotropic silicon etchant, potassium hydroxide, 10:1 HF, 5:1 BHF, Pad Etch 4, hot phosphoric acid, Aluminum Etchant Type A, titanium wet etchant, CR-7 chromium etchant, CR-14 chromium etchant, molybdenum etchant, warm hydrogen peroxide, Copper Etchant Type CE-200, Copper Etchant APS 100, dilute aqua regia, AU-5 gold etchant, Nichrome Etchant TFN, hot sulfuric+phosphoric acids, Piranha, Microstrip 2001, acetone, methanol, isopropanol, xenon difluoride, HF+H/sub 2/O vapor, oxygen plasma, two deep reactive ion etch recipes with two different types of wafer clamping, SF/sub 6/ plasma, SF/sub 6/+O/sub 2/ plasma, CF/sub 4/ plasma, CF/sub 4/+O/sub 2/ plasma, and argon ion milling. The etch rates of 620 combinations of these were measured. The etch rates of thermal oxide in different dilutions of HF and BHF are also reported. Sample preparation and information about the etches is given.","PeriodicalId":13438,"journal":{"name":"IEEE\\/ASME Journal of Microelectromechanical Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2003-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87166021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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