Factors Influencing the Accuracy of Switching Characterization for SiC MOSFET

Silicon Carbide (SiC) power semiconductor device has been used in power electronics in recent years. However, it is a challenge to achieve accurate switching characterization of SiC MOSFET than Si IGBT due to its fast switching speed. Firstly, this paper analyzed the factors influencing the accuracy of switching characterization for SiC MOSFET. It is found that the signal zero bias of drain-source voltage (Vds) and current (Id), the time delay between Vds and Ids, sampling frequency and sampling bandwidth of measured equipments all lead to the inaccuracy. Moreover, a method based on SiC MOSFET switching behavior is proposed. The analysis and the model are validated from the experimental results based on a 1200V/600ASiC MOSFET power module and a 45m$\Omega$ SiC MOSFET discrete.